Abstract: A semiconductor memory device and method of fabricating the same, which improves adhesion of the lower electrode of a ferroelectric planar capacitor, and prevents inter-diffusion between the Pt electrode of the capacitor and adhesion layer placed under the Pt electrode. The semiconductor memory device includes an insulating layer formed on a substrate, a paraelectric layer formed on the insulating layer, and a conductive layer formed on the paraelectric layer.

Abstract: A radio frequency sputtering apparatus and a film forming method using the same are disclosed. The method includes the steps of floating a shield adjacent to the substrate, applying an RF power to the substrate as well as the target to induce a self-bias voltage to the target and the substrate, and restricting a plasma discharge region in accordance with the ionization of a process gas to an adjacency to the target, thereby decreasing the bombarding of the film on the wafer by positive ions of the plasma and negative ions from the target.

Abstract: A semiconductor capacitor structure is made from a fabrication method which includes a step for forming an insulation film having a contact hole so that a portion of a substrate is exposed therethrough. Thereafter, a composite first electrode composed of a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are formed on a portion of the insulation film including the contact hole. A Perovskite structure dielectric film is formed on the first electrode, and a Perovskite structure second electrode on the dielectric film is formed. The capacitor has a high dielectric constant approaching that of an epitaxial structure of a mono-crystalline substrate, and interfaces with more stabilized grain boundaries than those of a poly-crystalline structure. Hence, the reduction of trapped charge density between interfaces of the electrodes and dielectric films leads to a decreased leakage current and an improved TDDB (time-dependent direct breakdown) property.

Abstract: A semiconductor memory device and method of fabricating the same, which improves adhesion of the lower electrode of a ferroelectric planar capacitor, and prevents inter-diffusion between the Pt electrode of the capacitor and adhesion layer placed under the Pt electrode. The semiconductor memory device includes an insulating layer formed on a substrate, a paraelectric layer formed on the insulating layer, and a conductive layer formed on the paraelectric layer.

Abstract: A method of fabricating a capacitor of a semiconductor device is disclosed including the step of forming a lower electrode layer on a semiconductor substrate, and a dielectric on the lower electrode layer, a part of the lower electrode layer, a part of the upper electrode layer adjacent to the dielectric of the capacitor including the upper electrode on the dielectric, or all of them containing oxygen.

Abstract: A semiconductor capacitor structure is made from a fabrication method which includes a step for forming an insulation film having a contact hole so that a portion of a substrate is exposed therethrough. Thereafter, a composite first electrode composed of a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are formed on a portion of the insulation film including the contact hole. A Perovskite structure dielectric film is formed on the first electrode, and a Perovskite structure second electrode on the dielectric film is formed. The capacitor has a high dielectric constant approaching that of an epitaxial structure of a mono-crystalline substrate, and interfaces with more stabilized grain boundaries than those of a poly-crystalline structure. Hence, the reduction of trapped charge density between interfaces of the electrodes and dielectric films leads to a decreased leakage current and an improved TDDB (time-dependent direct breakdown) property.

Abstract: A method of forming a thin film using a sputtering apparatus having a chamber, includes the steps of providing a target and a wafer in the chamber, and providing an inert gas to form atomized target material, a reactive etching gas for reacting with the target to form a molecular by-product, and a reactive sputter gas for reacting with the atomized target material and the molecular by-product to form a thin film on the wafer.