Abstract: A selector includes a base material including carbon; and a dopant implanted into the base material. A method for fabricating a selector includes forming a carbon layer and implanting a dopant into the carbon layer. A semiconductor device includes a selector pattern including carbon as a base material and a dopant implanted through an ion implantation process; and a memory pattern disposed in an upper portion or a lower portion of the selector pattern.

Abstract: A selector includes a carbon material that includes carbon and a trivalent element that is chemically bond to cardon; and a dopant material implanted to the carbon material to form trap sites of conductive carriers based on a chemical bond between the carbon and the trivalent element in the carbon. A method for fabricating a selector includes forming a carbon layer that includes carbon; chemically reacting a trivalent element with the carbon in the carbon layer; and implanting a dopant through an ion implantation process.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a selector pattern including an insulating material doped with a dopant to exhibit different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage, wherein the selector pattern includes a first region that is formed in an edge extending from a sidewall of the selector pattern and a second region that has a sidewall in contact with the first region, and a concentration of the dopant in the first region is different from a concentration of the dopant in the second region.

Abstract: A semiconductor device includes a plurality of memory cells. Each memory cell includes: a first electrode layer; a second electrode layer; a memory layer electrically connected to the second electrode layer and configured to store data; a selector layer interposed between the first electrode layer and the second electrode layer and configured to control an access to the memory layer, the selector layer including an insulating material layer doped with a dopant, wherein at least one of the first electrode layer and the second electrode layer includes a first sub-electrode layer, and a second sub-electrode layer interposed between the first sub-electrode layer and the selector layer and including a material having a work function greater than a work function of the first sub-electrode layer.

Abstract: A semiconductor device includes a plurality of memory cells. Each memory cell includes: a memory layer configured to store data; and a selector layer configured to control an access to the memory layer, wherein the selector layer includes a layer which includes an insulating material and a porous material that are mixed, and a dopant that is present in the layer and breaks a bond between constituent elements of the insulating material.

Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: A method for fabricating an electrode may include: forming a carbon layer; performing an ion beam etch process to planarize and harden a surface of the carbon layer on the carbon layer; and performing an impurity doping process to dope an impurity into the carbon layer.

Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: Disclosed is a method and system for providing a camera effect. An effect providing method of an electronic device configured as a computer includes determining an emotion for a camera image of the electronic device as a criterion for selecting an effect to be applied to the camera image of the electronic device; and immediately applying, to the camera image, an effect that is randomly selected from among effects representing the determined emotion.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: Provided is a method and system for measuring a bandwidth of a network based on a buffer and adaptively transmitting data in a real-time live environment. The method includes verifying a duration of data storage in a buffer configured to manage a data packet in a real-time live environment; and measuring a bandwidth of a network based on the duration of data storage in the buffer and adaptively controlling a data transmission rate based on the bandwidth.

Abstract: The disclosed technology includes an electronic device. The electronic device includes a semiconductor memory, and the semiconductor memory includes a variable resistance element that exhibits different resistance states for storing different data and is structured to include a planar shape including two curved potions of different curvatures.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Disclosed is a method and system for providing a camera effect. An effect providing method of an electronic device configured as a computer includes determining an emotion for a camera image of the electronic device as a criterion for selecting an effect to be applied to the camera image of the electronic device; and immediately applying, to the camera image, an effect that is randomly selected from among effects representing the determined emotion.

Abstract: The disclosed technology includes an electronic device. The electronic device includes a semiconductor memory, and the semiconductor memory includes a variable resistance element that exhibits different resistance states for storing different data and is structured to include a planar shape including two curved potions of different curvatures.