Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: Disclosed is a method and system for providing a camera effect. An effect providing method of an electronic device configured as a computer includes determining an emotion for a camera image of the electronic device as a criterion for selecting an effect to be applied to the camera image of the electronic device; and immediately applying, to the camera image, an effect that is randomly selected from among effects representing the determined emotion.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: Provided is a method and system for measuring a bandwidth of a network based on a buffer and adaptively transmitting data in a real-time live environment. The method includes verifying a duration of data storage in a buffer configured to manage a data packet in a real-time live environment; and measuring a bandwidth of a network based on the duration of data storage in the buffer and adaptively controlling a data transmission rate based on the bandwidth.

Abstract: The disclosed technology includes an electronic device. The electronic device includes a semiconductor memory, and the semiconductor memory includes a variable resistance element that exhibits different resistance states for storing different data and is structured to include a planar shape including two curved potions of different curvatures.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: The disclosed technology includes an electronic device. The electronic device includes a semiconductor memory, and the semiconductor memory includes a variable resistance element that exhibits different resistance states for storing different data and is structured to include a planar shape including two curved potions of different curvatures.

Abstract: Disclosed is a method and system for providing a camera effect. An effect providing method of an electronic device configured as a computer includes determining an emotion for a camera image of the electronic device as a criterion for selecting an effect to be applied to the camera image of the electronic device; and immediately applying, to the camera image, an effect that is randomly selected from among effects representing the determined emotion.

Abstract: Disclosed herein are a humidifying apparatus which may be prevented from being contaminated. A humidifying apparatus comprises a water tank configured to store water, a filter assembly configured to filter the water stored in the water tank and a humidifying assembly configured to perform humidification by absorbing and vaporizing the water filtered by the filter assembly, a drain flow passage provided at a lower surface of the humidifying assembly, wherein residual water remaining after being absorbed in the humidifying assembly is recovered in the water tank via the drain flow passage, and a guide rib configured to guide the water recovered in the water tank is provided in the water tank.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: The disclosed technology includes an electronic device. The electronic device includes a semiconductor memory, and the semiconductor memory includes a variable resistance element that exhibits different resistance states for storing different data and is structured to include a planar shape including two curved potions of different curvatures.

Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.

Abstract: In one implementation, an electronic device is provided to include a semiconductor memory, wherein the semiconductor memory may include: a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction free layer, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, and the electronic device may further include, in a first direction in which the free layer, the tunnel barrier layer and the pinned layer are arranged, a first permanent magnet having a first surface facing a first surface of the variable resistance element and spaced from the variable resistance element, wherein a magnetic field generated by the first permanent magnet may have a direction which offsets or reduces an influence of a stray field generated by the pinned layer.