Patents by Inventor Jeong-Na Huh

Jeong-Na Huh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7393410
    Abstract: There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.
    Type: Grant
    Filed: April 26, 2005
    Date of Patent: July 1, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Sang-Hyun Lee, Tae-Won Jeong, Jeong-Na Huh
  • Publication number: 20050236953
    Abstract: A Field Emission Device (FED) includes an emitter formed on a cathode electrode and including Carbon NanoTubes (CNTs), and a gate electrode to extract electrons from the emitter. In addition, a RuOx layer or a PdOx layer is coated on the emitter to protect the CNTs and to stabilize the emission from the CNTs. A stabilizer layer to stabilize an emission structure and to protect emission ends is coated on the surface of a CNT emitter or the surfaces of the CNTs, more specifically, the emission ends of the CNTs, in order to prevent abrasion of the CNTs caused by an excess current or an emission process.
    Type: Application
    Filed: April 18, 2005
    Publication date: October 27, 2005
    Inventors: Jeong-Hee Lee, Tae-Won Jeong, Won-Seok Kim, Sang-Hyun Lee, Hyun-Jung Lee, Jeong-Na Huh
  • Publication number: 20050235904
    Abstract: A method of manufacturing a nano-wire using a crystal structure, A crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.
    Type: Application
    Filed: April 26, 2005
    Publication date: October 27, 2005
    Inventors: Sang-Hyun Lee, Tae-Won Jeong, Jeong-Na Huh