Abstract: An apparatus for nondestructive detecting of cracks in lapped electrically conductive upper and lower plates characterized by a probe having a square shape drive coil and a magnetoresistor sensor aligned with the longitudinal axis of the drive coil. The drive coil is intended to extend across the lap joint above the plates with the sensor mounted between the drive coil and plates. A signal generator applies periodic unipolar pulses to the drive coil.

Abstract: A backlight unit having a surface luminescence structure includes: a first substrate; a first electrode arranged on a lower surface of the first substrate; a first mixed layer arranged on a lower surface of the first electrode, and including emitters and phosphors; a second substrate arranged to face the first substrate; a second electrode arranged on an upper surface of the second substrate; and a second mixed layer arranged on an upper surface of the second electrode, and including emitters and phosphors. The backlight unit can be easily manufactured at a low cost, and the light emission efficiency and brightness characteristics of the backlight unit are maximized.

Abstract: A Field Emission Display (FED) using an electromagnetic field includes: a lower substrate and an upper substrate, spaced apart from each other and facing each other; cathode electrodes arranged on the lower substrate; gate electrodes arranged between the cathode electrodes; an anode electrode arranged on the upper substrate; a phosphor layer arranged on the anode electrode; and a gate driving circuit adapted to supply a current to the gate electrode to form an electromagnetic field around the gate electrode.

Abstract: A method of forming emitters and a method of manufacturing a Field Emission Device (FED) using the method includes: forming a volume-changeable structure on an electrode, the volume-changeable structure composed of a polymer which reversibly swells and shrinks in response to an external stimulus; injecting an electron-emitting material into the volume-changeable structure; aligning the electron-emitting material; and removing the polymer to form the emitters.

Abstract: A method of fabricating spacers for use in a flat panel device includes: preparing a core glass having a low solubility in a chemical etching solution and a tube glass having a high solubility in the chemical etching solution and having a larger inner diameter than an outer diameter of the core glass; inserting the core glass into the tube glass to obtain a cylindrical glass; drawing the cylindrical glass at a predetermined temperature until the core glass has a predetermined diameter; cutting the drawn cylindrical glass to a predetermined length; and removing the tube glass in the cylindrical glass using the chemical etching solution.

Abstract: A Field Emission Device (FED) includes an emitter formed on a cathode electrode and including Carbon NanoTubes (CNTs), and a gate electrode to extract electrons from the emitter. In addition, a RuOx layer or a PdOx layer is coated on the emitter to protect the CNTs and to stabilize the emission from the CNTs. A stabilizer layer to stabilize an emission structure and to protect emission ends is coated on the surface of a CNT emitter or the surfaces of the CNTs, more specifically, the emission ends of the CNTs, in order to prevent abrasion of the CNTs caused by an excess current or an emission process.

Abstract: A method of manufacturing a nano-wire using a crystal structure, A crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.

Abstract: Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Abstract: Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.