Abstract: Provided herein may be a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device may include a dummy stacked body including a plurality of first material layers and second material layers alternately stacked in a contact area, at least one contact plug formed to vertically pass through a portion or an entirety of the dummy stacked body, and a capacitor comprising a first electrode body and a second electrode body, the first and second electrode bodies formed around the at least one contact plug and vertically passed through a portion or an entirety of the dummy stacked body.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes a pipe gate stack structure in which a portion of a first channel layer is buried. The semiconductor device includes the pipe gate stack structure in which a portion of a second channel layer is buried. The semiconductor device configured to individually control the first and second channel layers.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes a pipe gate stack structure in which a portion of a first channel layer is buried. The semiconductor device includes the pipe gate stack structure in which a portion of a second channel layer is buried. The semiconductor device configured to individually control the first and second channel layers.