Patents by Inventor Jeong Seok Na
Jeong Seok Na has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240047269Abstract: Provided are deposition processes including deposition of a thin, protective Mo layer using a molybdenum chloride (MoClx) precursor. This may be followed by Mo deposition to fill the feature using a molybdenum oxyhalide (MoOyXz) precursor. The protective Mo layer enables Mo fill using an MoOyXz precursor without oxidation of the underlying surfaces. Also provided are in-situ clean processes in which a MoClx precursor is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoClx precursor may deposit an initial layer and/or fill a feature.Type: ApplicationFiled: January 3, 2022Publication date: February 8, 2024Inventors: Jeong-Seok NA, Shruti Vivek THOMBARE, Yao-Tsung HSIEH, David Joseph MANDIA, Chiukin Steven LAI
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Publication number: 20230326790Abstract: Methods of filling features including metal and dielectric surfaces with conductive materials involve cleaning the metal surfaces with little or no damage to the dielectric surfaces. After cleaning, the feature may be exposed to one or more reactants to fill the feature with the conductive material in an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process. Deposition may be selective or non-selective to the metal surface. In some embodiments, the filled feature is barrier-less, such that the conductive material directly contacts the metal and dielectric surfaces with no interposing barrier or adhesion layer.Type: ApplicationFiled: May 21, 2021Publication date: October 12, 2023Applicant: Lam Research CorporationInventors: Raihan M. TARAFDAR, Chiukin Steven LAI, Jeong-Seok NA
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Publication number: 20220328317Abstract: Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.Type: ApplicationFiled: September 1, 2020Publication date: October 13, 2022Applicant: Lam Research CorporationInventors: Jeong-Seok NA, Yao-Tsung HSIEH, Chiukin Steven LAI, Patrick A. VAN CLEEMPUT
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Patent number: 10731250Abstract: In some embodiments, deposition processes for ruthenium (Ru) feature fill include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.Type: GrantFiled: June 4, 2018Date of Patent: August 4, 2020Assignee: Lam Research CorporationInventors: Do Young Kim, Jeong-Seok Na, Chiukin Steven Lai, Raashina Humayun, Michal Danek
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Patent number: 10438847Abstract: Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.Type: GrantFiled: May 10, 2017Date of Patent: October 8, 2019Assignee: Lam Research CorporationInventors: Chiukin Steven Lai, Jeong-Seok Na, Raashina Humayun, Michal Danek, Kaihan Abidi Ashtiani
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Patent number: 10283404Abstract: Provided are methods of forming diffusion barriers and adhesion layers for interconnects such as cobalt (Co) interconnects or ruthenium (Ru) interconnects. The methods involve selective deposition of tungsten carbon nitride (WCN) films on the oxide surfaces of a feature including a Co surface. The selective growth of WCN on oxide allows the contact resistance at an interface such as a Co—Co interface or a Co—Ru interface to be significantly reduced while maintaining good film coverage, adhesion, and/or barrier properties on the sidewall oxide surfaces.Type: GrantFiled: March 30, 2017Date of Patent: May 7, 2019Assignee: Lam Research CorporationInventors: Jeong-Seok Na, Megha Rathod, Chiukin Steven Lai, Raashina Humayun
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Patent number: 10242879Abstract: Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.Type: GrantFiled: April 20, 2017Date of Patent: March 26, 2019Assignee: Lam Research CorporationInventors: Jeong-Seok Na, Raashina Humayun
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Patent number: 10229826Abstract: A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes a material selected from a group consisting of tantalum nitride, titanium nitride, tantalum and titanium. The method includes b) supplying a gas selected from a group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes c) depositing a metal layer on the barrier layer after b). The metal layer includes a metal selected from a group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.Type: GrantFiled: October 10, 2017Date of Patent: March 12, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Raihan Tarafdar, Shruti Thombare, Jeong-Seok Na, Raashina Humayun, Chiukin Steven Lai
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Publication number: 20180347041Abstract: Provided are deposition processes for ruthenium (Ru) feature fill. In some embodiments, the processes include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.Type: ApplicationFiled: June 4, 2018Publication date: December 6, 2018Inventors: Do Young Kim, Jeong-Seok Na, Chiukin Steven Lai, Raashina Humayun, Michal Danek
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Publication number: 20180308701Abstract: Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.Type: ApplicationFiled: April 20, 2017Publication date: October 25, 2018Inventors: Jeong-Seok Na, Raashina Humayun
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Publication number: 20180286746Abstract: Provided are methods of forming diffusion barriers and adhesion layers for interconnects such as cobalt (Co) interconnects or ruthenium (Ru) interconnects. The methods involve selective deposition of tungsten carbon nitride (WCN) films on the oxide surfaces of a feature including a Co surface. The selective growth of WCN on oxide allows the contact resistance at an interface such as a Co—Co interface or a Co—Ru interface to be significantly reduced while maintaining good film coverage, adhesion, and/or barrier properties on the sidewall oxide surfaces.Type: ApplicationFiled: March 30, 2017Publication date: October 4, 2018Inventors: Jeong-Seok Na, Megha Rathod, Chiukin Steven Lai, Raashina Humayun
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Publication number: 20180114694Abstract: A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes a material selected from a group consisting of tantalum nitride, titanium nitride, tantalum and titanium. The method includes b) supplying a gas selected from a group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes c) depositing a metal layer on the barrier layer after b). The metal layer includes a metal selected from a group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.Type: ApplicationFiled: October 10, 2017Publication date: April 26, 2018Inventors: Raihan Tarafdar, Shruti Thombare, Jeong-Seok Na, Raashina Humayun, Chiukin Steven Lai
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Publication number: 20170330797Abstract: Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.Type: ApplicationFiled: May 10, 2017Publication date: November 16, 2017Inventors: Chiukin Steven Lai, Jeong-Seok Na, Raashina Humayun, Michal Danek, Kaihan Abidi Ashtiani
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Patent number: 9748137Abstract: Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors. Methods may also involve using a remote plasma source to generate the nitrogen-based plasma. Methods also involve annealing the substrate.Type: GrantFiled: October 1, 2015Date of Patent: August 29, 2017Assignee: Lam Research CorporationInventors: Chiukin Steven Lai, Jeong-Seok Na, Raihan Tarafdar, Raashina Humayun, Michal Danek
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Patent number: 9349637Abstract: Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors.Type: GrantFiled: August 21, 2014Date of Patent: May 24, 2016Assignee: Lam Research CorporationInventors: Jeong-Seok Na, Tianhua Yu, Michal Danek, Sanjay Gopinath
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Publication number: 20160056077Abstract: Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors. Methods may also involve using a remote plasma source to generate the nitrogen-based plasma. Methods also involve annealing the substrate.Type: ApplicationFiled: October 1, 2015Publication date: February 25, 2016Inventors: Chiukin Steven Lai, Jeong-Seok Na, Raihan Tarafdar, Raashina Humayun, Michal Danek
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Publication number: 20160056074Abstract: Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors.Type: ApplicationFiled: August 21, 2014Publication date: February 25, 2016Inventors: Jeong-Seok Na, Tianhua Yu, Michal Danek, Sanjay Gopinath
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Patent number: 9255326Abstract: Systems and methods deposit a film on a substrate by introducing a precursor gas into a reaction volume of a processing chamber. A substrate is arranged in the reaction volume. After a predetermined soak period, the precursor gas is purged from the reaction volume. The substrate is exposed with plasma gas using a remote plasma source.Type: GrantFiled: March 12, 2013Date of Patent: February 9, 2016Assignee: Novellus Systems, Inc.Inventors: Jeong-Seok Na, Sanjay Gopinath
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Publication number: 20140272185Abstract: Systems and methods deposit a film on a substrate by introducing a precursor gas into a reaction volume of a processing chamber. A substrate is arranged in the reaction volume. After a predetermined soak period, the precursor gas is purged from the reaction volume. The substrate is exposed with plasma gas using a remote plasma source.Type: ApplicationFiled: March 12, 2013Publication date: September 18, 2014Inventors: Jeong-Seok Na, Sanjay Gopinath
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Patent number: 8747964Abstract: Systems, methods, and apparatus for depositing a tantalum layer on a wafer substrate are disclosed. In one aspect, a tantalum layer may be deposited on a surface of a wafer substrate using an ion-induced atomic layer deposition process with a tantalum precursor. A copper layer may be deposited on the tantalum layer.Type: GrantFiled: September 23, 2011Date of Patent: June 10, 2014Assignee: Novellus Systems, Inc.Inventors: Kie Jin Park, Jeong Seok Na, Victor Lu