Patents by Inventor Jeong-sik Choi
Jeong-sik Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118028Abstract: An infrared heat source module is configured to minimize problems such as wrinkles or cracks in electrodes even if the patterns of a coated part and an uncoated part of the electrodes present in a current collector vary. The module improves a drying efficiency of the coated part of the current collector. An electrode using the infrared heat source module is manufactured by a process.Type: ApplicationFiled: January 27, 2022Publication date: April 11, 2024Applicant: LG Energy Solution, Ltd.Inventors: Soon Sik Choi, Young Kuk Ko, Oh Cheol Kwon, Ji Hwan Kim, Jeong Won Lee
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Patent number: 11953958Abstract: A display includes: a display panel; and a panel bottom sheet disposed below the display panel, the panel bottom sheet including: a first heat dissipation layer; a second heat dissipation layer over the first heat dissipation layer, including a first opening formed completely through the second heat dissipation layer in a thickness direction; a heat dissipation coupling interlayer between the first heat dissipation layer and the second heat dissipation layer, and a heat dissipation substrate on the second heat dissipation layer.Type: GrantFiled: December 12, 2022Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Kang Woo Lee, Boo Kan Ki, June Hyoung Park, Sun Hee Oh, Dong Hyeon Lee, Jeong In Lee, Hyuk Hwan Kim, Seong Sik Choi
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Publication number: 20240086603Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: SAMSUNG ELECTRONICS CO, LTD.Inventors: In HUH, Jeong-hoon KO, Hyo-jin CHOI, Seung-ju KIM, Chang-wook JEONG, Joon-wan CHAI, Kwang-II PARK, Youn-sik PARK, Hyun-sun PARK, Young-min OH, Jun-haeng LEE, Tae-ho LEE
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Patent number: 11915510Abstract: A fingerprint sensor including: a substrate; a light sensing element that includes a sensing electrode disposed on the substrate, a semiconductor layer disposed on the sensing electrode, and a common electrode disposed on the semiconductor layer; a light-blocking conductive layer disposed on the common electrode and including light transmitting holes; and a light guide unit disposed on the light-blocking conductive layer.Type: GrantFiled: August 2, 2021Date of Patent: February 27, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Kyo Won Ku, Young Sik Kim, Jung Hak Kim, Jeong Heon Lee, Hee Yeon Choi
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Patent number: 11513525Abstract: A main server for controlling laser irradiation of a movement path of a robot, the main server including a communication unit configured to communicate with a camera module and a laser irradiation module; and a controller configured to: receive, via the communication unit, an image of a robot captured by the camera module, identify a location of the robot in the image captured by the camera module, generate a movement path of the robot based on sensing information, and transmit, via the communication unit, movement path information to the laser irradiation module for outputting the movement path to a vicinity of the robot with a laser for the robot to follow, in which the sensing information includes first information about an obstacle sensed by the camera module or second information about the obstacle sensed by the laser irradiation module.Type: GrantFiled: November 26, 2019Date of Patent: November 29, 2022Assignee: LG ELECTRONICS INC.Inventors: Gyuho Eoh, Dong Ki Noh, Seungmin Baek, Jeong Sik Choi
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Publication number: 20200174484Abstract: A main server for controlling laser irradiation of a movement path of a robot, the main server including a communication unit configured to communicate with a camera module and a laser irradiation module; and a controller configured to: receive, via the communication unit, an image of a robot captured by the camera module, identify a location of the robot in the image captured by the camera module, generate a movement path of the robot based on sensing information, and transmit, via the communication unit, movement path information to the laser irradiation module for outputting the movement path to a vicinity of the robot with a laser for the robot to follow, in which the sensing information includes first information about an obstacle sensed by the camera module or second information about the obstacle sensed by the laser irradiation module.Type: ApplicationFiled: November 26, 2019Publication date: June 4, 2020Applicant: LG ELECTRONICS INC.Inventors: Gyuho EOH, Dong Ki NOH, Seungmin BAEK, Jeong Sik CHOI
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Patent number: 9613741Abstract: An electromagnetic actuator includes a first body which includes a biased permanent magnet, a magnetic path control device which is disposed to adjust a magnetic path produced by the biased permanent magnet, at least one core which is disposed to face the biased permanent magnet and the magnetic path control device, and a coil which is wound on the at least one core so as to reinforce or cancel the magnetic path produced by the biased permanent magnet; and a second body which is separated from the biased permanent magnet and the magnetic path control device when the at least one core is between the second body and at least one of the biased permanent magnet and the magnetic path control device.Type: GrantFiled: January 23, 2015Date of Patent: April 4, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Oui-serg Kim, Sang-hoon Kim, Hyo-soo Kim, Kun-bum Park, Jong-Ho Park, Young-hwan Yoon, Jeong-sik Choi
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Publication number: 20150287509Abstract: An electromagnetic actuator includes a first body which includes a biased permanent magnet, a magnetic path control device which is disposed to adjust a magnetic path produced by the biased permanent magnet, at least one core which is disposed to face the biased permanent magnet and the magnetic path control device, and a coil which is wound on the at least one core so as to reinforce or cancel the magnetic path produced by the biased permanent magnet; and a second body which is separated from the biased permanent magnet and the magnetic path control device when the at least one core is between the second body and at least one of the biased permanent magnet and the magnetic path control device.Type: ApplicationFiled: January 23, 2015Publication date: October 8, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Oui-serg KIM, Sang-hoon KIM, Hyo-soo KIM, Kun-bum PARK, Jong-Ho PARK, Young-hwan YOON, Jeong-sik CHOI
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Patent number: 9137691Abstract: A method and an apparatus for estimating a long-term transfer rate of a terminal are provided. The method for estimating the long-term transfer rate includes: calculating a burst transfer rate of each pilot signal which is transmitted from a base station to a target terminal to calculate a long-term transfer rate; and calculating a long-term transfer rate of the target terminal using distribution of the calculated burst transfer rates and the number (N) of terminals that are serviced by the base station.Type: GrantFiled: June 14, 2013Date of Patent: September 15, 2015Assignee: SNU R&DB FOUNDATIONInventors: Seong Cheol Kim, Jeong Sik Choi
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Publication number: 20140140240Abstract: A method and an apparatus for estimating a long-term transfer rate of a terminal are provided. The method for estimating the long-term transfer rate includes: calculating a burst transfer rate of each pilot signal which is transmitted from a base station to a target terminal to calculate a long-term transfer rate; and calculating a long-term transfer rate of the target terminal using distribution of the calculated burst transfer rates and the number (N) of terminals that are serviced by the base station.Type: ApplicationFiled: June 14, 2013Publication date: May 22, 2014Inventors: Seong Cheol KIM, Jeong Sik CHOI
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Patent number: 8232726Abstract: The present invention relates to a plasma display apparatus. The plasma display apparatus comprises an upper substrate, a first electrode and a second electrode formed on the upper substrate, a lower substrate disposed to face the upper substrate, and a third electrode and a barrier rib formed in the lower substrate. First and second black matrices are formed in the upper substrate and are separated from each other on a same straight line. According to the present invention, while maintaining the function of improving a contrast ratio and reflectance of a black matrix, a short and a spotted pattern that may occur when simultaneous exposure is performed can be reduced, and so the picture quality, the cost of production, and efficiency can be improved.Type: GrantFiled: February 12, 2009Date of Patent: July 31, 2012Assignee: LG Electronics Inc.Inventors: Kyeong Cheol Seo, Duk Gyu Jang, Jeong Sik Choi, Tae Hwa Hwang
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Publication number: 20110210662Abstract: The present invention relates to a plasma display apparatus. The plasma display apparatus comprises an upper substrate, a first electrode and a second electrode formed on the upper substrate, a lower substrate disposed to face the upper substrate, and a third electrode and a barrier rib formed in the lower substrate. First and second black matrices are formed in the upper substrate and are separated from each other on a same straight line. According to the present invention, while maintaining the function of improving a contrast ratio and reflectance of a black matrix, a short and a spotted pattern that may occur when simultaneous exposure is performed can be reduced, and so the picture quality, the cost of production, and efficiency can be improved.Type: ApplicationFiled: February 12, 2009Publication date: September 1, 2011Applicant: LG ELECTRONICS INC.Inventors: Kyeong Cheol Seo, Duk Gyu Jang, Jeong Sik Choi, Tae Hwa Hwang
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Patent number: 7569992Abstract: Disclosed are a plasma display panel and a method of manufacturing the same. The plasma display panel according to the present invention comprises a front panel comprising a protective layer and a rear panel disposed apart from the front panel by a predetermined distance. The protective layer comprising magnesium oxide (MgO) is doped with scandium (Sc) and calcium (Ca). The plasma display panel according to the present invention has the advantage of excellent temperature-dependent panel characteristic. The plasma display panel according to the present invention also has the further advantage of excellent voltage margin of the address voltage.Type: GrantFiled: January 4, 2006Date of Patent: August 4, 2009Assignee: LG Electronics Inc.Inventors: Jeong Sik Choi, Eung Chul Park
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Patent number: 7495292Abstract: Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.Type: GrantFiled: March 2, 2007Date of Patent: February 24, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Se-Hoon Oh, Jung-Hee Chung, Jae-Hyoung Choi, Jeong-Sik Choi, Sung-Tae Kim, Cha-Young Yoo
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Patent number: 7314806Abstract: A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.Type: GrantFiled: April 1, 2005Date of Patent: January 1, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-hyoung Choi, Sung-tae Kim, Ki-chul Kim, Cha-young Yoo, Jeong-hee Chung, Se-hoon Oh, Jeong-sik Choi
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Patent number: 7304367Abstract: A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.Type: GrantFiled: June 17, 2004Date of Patent: December 4, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-hyoung Choi, Jung-hee Chung, Cha-young Yoo, Nam-myun Cho, Jeong-sik Choi, Se-hoon Oh, Dong-kyun Park
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Publication number: 20070145485Abstract: Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.Type: ApplicationFiled: March 2, 2007Publication date: June 28, 2007Inventors: Se-Hoon Oh, Jung-Hee Chung, Jae-Hyoung Choi, Jeong-Sik Choi, Sung-Tae Kim, Cha-Young Yoo
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Patent number: 7205219Abstract: Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.Type: GrantFiled: April 13, 2004Date of Patent: April 17, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Se-Hoon Oh, Jung-Hee Chung, Jae-Hyoung Choi, Jeong-Sik Choi, Sung-Tae Kim, Cha-Young Yoo
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Patent number: 7179739Abstract: Embodiments of the present invention include methods of forming a contact to a capacitor in a semiconductor device. A metal silicide layer is formed at a top surface of a conductive plug of the semiconductor device that is coupled to a bottom electrode of the capacitor to provide an ohmic contact therebetween. Forming a metal silicide layer may include exposing a surface of the conductive plug, depositing a metal layer of the bottom electrode on the exposed surface of the conductive plug and thermally processing the semiconductor device to react a part of the deposited metal layer and the conductive plug to form the metal silicide layer. Methods of forming a semiconductor device including a capacitor having a metal silicide layer connecting a bottom electrode of the capacitor and a conductive plug are also provided.Type: GrantFiled: June 8, 2004Date of Patent: February 20, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-Sik Choi, Jung-Hee Chung, Woo-Gwan Shim, Young-Sun Kim, Jae-Hyoung Choi, Se-Hoon Oh, Cha-Young Yoo
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Publication number: 20070026625Abstract: In one embodiment, a method of fabricating a MIM capacitor includes forming an interlayer insulating layer having a contact plug on a semiconductor substrate, forming an etch stop layer on the interlayer insulating layer, and forming a mold layer having an opening exposing the contact plug on the etch stop layer. Next, a first conductive layer for the lower electrode is formed on the sidewalls and the bottom of the opening, and a photoresistive layer is formed on the first conductive layer. The mold layer and the photoresistive layer are then removed, and a composite dielectric layer is formed on the lower electrode. A second conductive layer is then formed on the composite dielectric layer. The composite dielectric layer may be composed of an oxide hafnium (HfO2) dielectric layer and an oxide aluminum (Al2O3) dielectric layer, with the oxide hafnium dielectric layer having a thickness of about 20 ? to about 50 ?.Type: ApplicationFiled: July 28, 2006Publication date: February 1, 2007Inventors: Jung-Hee CHUNG, Jong-Cheol LEE, Jae-Hyoung CHOI, Jeong-Sik CHOI, Se-Hoon OH, Cha-Young YOO