Abstract: The present invention relates to a method and apparatus for encoding a displacement video using image tiling. A method for encoding multi-dimensional data according to an embodiment of the present disclosure may comprise: converting the multi-dimensional data into one or more frames with two-dimensional characteristics; generating one or more frame groups by grouping the one or more frames with pre-configured number units; reconstructing frames belonging to each frame group into a tiled frame; and generating a bitstream by encoding the tiled frame. Here, the tiled frame may be constructed with one or more blocks, and each block may be constructed by rearranging pixels existing at the same location in the frames.

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer, and an external electrode disposed on the body. The dielectric layer includes a BaTiO3-based base material main ingredient, a sub-ingredient including Dy, and an additive. The additive is one or more of Sm, Gd and Tb, and a content of the additive is 25 mol or more and less than 50 mol relative to 100 mol of Dy. The dielectric layer includes a plurality of dielectric grains. When an average grain size of the plurality of dielectric grains is represented by G, and an average thickness of the dielectric layer is represented by td, 1.75?td/G?2.23 is satisfied.

Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers, and a plurality of internal electrodes stacked with one of the dielectric layers interposed therebetween, and external electrodes disposed on external surfaces of the body and connected to the internal electrodes, respectively. The plurality of dielectric layers include a dielectric expressed by empirical formula BaM1aTi1-xSnxM2bO3 (0.008?x?0.05, 0.006?a?0.03, and 0.0006?b<0.006) in which M1 includes a rare earth element, and M2 includes at least one of Mn or V.

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.

Abstract: A multilayer capacitor includes a capacitor body including an active region having dielectric layers and internal electrodes alternately stacked therein, the capacitor body including upper and lower covers disposed on upper and lower surfaces of the active region, respectively; and an external electrode disposed on an external surface of the capacitor body. In one of the upper and lower covers, a portion thereof between a boundary surface of the active region and a boundary surface of the capacitor body is divided into a first cover region adjacent to the active region and a second cover region adjacent to the boundary surface of the capacitor body, and the first cover region includes grains having a core-shell structure doped with Sn. The first cover region includes 20% or more of Sn-doped core-shell structure grains, compared to the total of grains in the first cover region.

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.

Abstract: A ceramic electronic component includes: a body including an active portion, including a first dielectric layer and an internal electrode, and a margin portion disposed a side surface of the active portion and including a second dielectric layer; and an external electrode disposed on the body and connected to the internal electrode. The first and second dielectric layers have different dielectric compositions. The first dielectric layer includes tin (Sn) and dysprosium (Dy). The second dielectric layer includes magnesium (Mg).

Abstract: A multilayer capacitor includes a body including a laminate structure in which at least one first internal electrode and at least one second internal electrode are alternately stacked in a first direction with at least one dielectric layer therebetween, and first and second external electrodes spaced apart on the body, to be connected to at least one first internal electrode and at least one second internal electrode, respectively. The body includes, in a larger molar content, at least one selected from the group consisting of Dy, Tb, Y, Sm, Ho, Gd, Er, Ce, La and Nd in a capacitance formation region including a region between at least one first internal electrode and at least one second internal electrode than in a margin region including a region between a boundary line of at least one first internal electrode and at least one second internal electrode and a surface of the body.

Abstract: A dielectric composition includes a BaTiO3-based component as a main component, a donor component including a first element and a second element each having a shorter ionic radius and greater atomic weight than Ba, and an acceptor component including at least one of Mg, Al, Mn and V. An ionic radius of the second element is greater than an ionic radius of the first element, a molar content of the second element is less than a molar content of the first element, and a molar content of the acceptor component is greater than a molar content of the donor component.

Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes laminated with the dielectric layers interposed therebetween, and an external electrode disposed externally on the body and connected to one or more of the plurality of internal electrodes. One of the plurality of dielectric layers includes a barium titanate composition including a Sn component. One of the plurality of internal electrodes includes a Sn component. The one of the plurality of dielectric layers has a Sn content equal to at least twice a Sn content of the one of the plurality of internal electrodes adjacent to the one of the plurality of dielectric layers.

Abstract: A multilayer capacitor includes a capacitor body including an active region having dielectric layers and internal electrodes alternately stacked therein, the capacitor body including upper and lower covers disposed on upper and lower surfaces of the active region, respectively; and an external electrode disposed on an external surface of the capacitor body. In one of the upper and lower covers, a portion thereof between a boundary surface of the active region and a boundary surface of the capacitor body is divided into a first cover region adjacent to the active region and a second cover region adjacent to the boundary surface of the capacitor body, and the first cover region includes grains having a core-shell structure doped with Sn. The first cover region includes 20% or more of Sn-doped core-shell structure grains, compared to the total of grains in the first cover region.

Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers, and a plurality of internal electrodes stacked with one of the dielectric layers interposed therebetween, and external electrodes disposed on external surfaces of the body and connected to the internal electrodes, respectively. The plurality of dielectric layers include a dielectric expressed by empirical formula BaM1aTi1-xSnxM2bO3 (0.008?x?0.05, 0.006?a?0.03, and 0.0006?b ?0.006) in which M1 includes a rare earth element, and M2 includes at least one of Mn or V.

Abstract: A capacitor component includes a body including dielectric layers and internal electrodes alternately arranged with the dielectric layers; and external electrodes including electrode layers disposed on the body and connected to the internal electrodes, first conductive resin layers disposed on the electrode layers, and second conductive resin layers disposed on the first conductive resin layers, wherein the first and second conductive resin layers include a metal powder and a base resin, the first conductive resin layers have a lower metal powder content than the second conductive resin layers, the metal powder includes one or more of flake-type powder particle and spherical-type powder particle, and a weight ratio of the flake-type powder particle in the metal powder contained in the first conductive resin layers is 60% or more, and a weight ratio of the spherical-type powder particle in the metal powder contained in the second conductive resin layers is 50% or more.

Abstract: A capacitor component includes a body including dielectric layers and internal electrodes alternately arranged with the dielectric layers; and external electrodes including electrode layers disposed on the body and connected to the internal electrodes, first conductive resin layers disposed on the electrode layers, and second conductive resin layers disposed on the first conductive resin layers, wherein the first and second conductive resin layers include a metal powder and a base resin, the first conductive resin layers have a lower metal powder content than the second conductive resin layers, the metal powder includes one or more of flake-type powder particle and spherical-type powder particle, and a weight ratio of the flake-type powder particle in the metal powder contained in the first conductive resin layers is 60% or more, and a weight ratio of the spherical-type powder particle in the metal powder contained in the second conductive resin layers is 50% or more.

Abstract: An electronic device for processing touch input is disclosed. An electronic device may comprise a touchscreen and a processor configured to perform a first function based on a touch input made by an external object and received through the touchscreen, to determine whether the electronic device is grounded when a variation in a capacitance for the touch input increases to a preset first threshold or more, to adjust a first capacitance for the touch input where the capacitance variation occurs when the electronic device is determined to not be grounded, and to determine whether to perform a second function based on the touch input where the capacitance variation occurs based on the adjusted first capacitance.

Abstract: An electronic device according to various examples comprises: a touch screen display including a touch panel; a processor electrically connected to the display; and a memory electrically connected to the processor, wherein the memory can be set to store instructions that, when executed, enable the processor to: receive, from the touch panel, data related to contact or proximity of an external object to the touch screen display; determine an area detected by the touch panel through the contact or the proximity on the basis of at least a part of the data; determine at least a part of the area having a relatively stronger signal strength in the area; determine at least another part of the area having a relatively weaker signal strength in the area; and display an image or a change in an image on the display on the basis of positions and/or sizes of the determined areas.

Abstract: A method of exchanging Session Initiation Protocol (SIP) options messages for Rich Communication Suite (RCS) capability discovery in a portable terminal is provided. The method includes requesting a server for a setting value associated with an SIP options message exchange, receiving the setting value including the number of the SIP options messages for transmission and a transmission cycle of the SIP options message, transmitting the SIP options message to each of as many contacts as the number of the SIP options messages in the transmission cycle, receiving a reply message from each of the contacts to which the SIP options message is sent, and updating RCS capability information of the contact according to the received reply message, the contacts are registered to a phone book of the portable terminal.

Abstract: An electronic device according to various examples comprises: a touch screen display including a touch panel; a processor electrically connected to the display; and a memory electrically connected to the processor, wherein the memory can be set to store instructions that, when executed, enable the processor to: receive, from the touch panel, data related to contact or proximity of an external object to the touch screen display; determine an area detected by the touch panel through the contact or the proximity on the basis of at least a part of the data; determine at least a part of the area having a relatively stronger signal strength in the area; determine at least another part of the area having a relatively weaker signal strength in the area; and display an image or a change in an image on the display on the basis of positions and/or sizes of the determined areas.

Abstract: A method and system for allocating device object identifier (OID) in open machine-to-machine (m2m) system and application system applying the same are disclosed. In one aspect, the method includes generating, at a hardware server device, an OID of a first computing device, wherein the OID includes a first arc identifying a manufacturer of the first computing device, a second arc identifying a model number of the first computing device and a third arc identifying a serial number of the first computing device. The method also includes allocating, at the hardware server device, the generated OID to the first computing device.