Abstract: A method for manufacturing a semiconductor device that reduces the overall number of masking processes while also preventing short-circuiting between electrodes. The method can include sequentially forming a first insulating film, a lower metal layer, a second insulating material, an upper metal layer, and a third insulating material over a semiconductor substrate; forming a third insulating film and an upper electrode by performing a first etching process using a mask to pattern the third insulating material and the upper metal layer; and then forming a second insulating film and a lower electrode by performing a second etching process using the mask to pattern the second insulating material and the lower metal layer.

Abstract: A method for fabricating a semiconductor transistor having a size of 90 n m or less includes, sequentially depositing a gate oxide film, a poly silicon, an organic antireflection film, and a photo-resist on a substrate; exposing and developing the photo-resist to form a photo-resist pattern having a critical dimension DICD; etching the antireflection film using the photo-resist as a mask to form an antireflection film pattern; etching the poly silicon using the photo-resist as a mask to form a first poly silicon pattern and a second poly silicon pattern on a portion of the gate oxide film; and removing the second poly silicon pattern and the portion of the gate oxide film.