Abstract: Disclosed is a method, system, and non-transitory computer-readable record medium for providing a reputation badge for a video chat. The method includes providing a video chat with another user selected through real-time matching based on a request from a user of the computer apparatus; and using a plurality of reputation badges representing different reputation information in the video chat.

Abstract: Disclosed is a method, system, and non-transitory computer-readable record medium for providing a reputation badge for a video chat. The method includes providing a video chat with another user selected through real-time matching based on a request from a user of the computer apparatus; and using a plurality of reputation badges representing different reputation information in the video chat.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: An optical apparatus such as a varifocal fluidic lens is provided. Optical apparatus includes a spacer frame, optical fluid, an elastic membrane, an actuator, an actuator frame, and a thermally deformable frame. Spacer frame defines an internal space including a lens portion and a driving portion that connect to each other, and the driving portion is disposed to surround the lens portion disposed in the center area of the internal space. Optical fluid is filled in the internal space defined by the spacer frame. The elastic membrane is attached on a surface of the spacer frame, to cover a side of the internal space, and the thermally deformable plate is attached on the other surface of the spacer frame, to cover the other side of the internal space. The thermally deformable plate deforms to increase or decrease a volume of the internal space according to a change in temperature.

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: A wafer-level passivation structure of a micro-device, a micro-device including the same, and methods of manufacturing the wafer-level passivation structure and the micro-device may be provided. In particular, the passivation structure may include a spacer that is disposed on a substrate, covers a portion of the first surface, and has an elastic property, and an anti-adhesion layer that is disposed on a surface of the substrate between the spacer. The spacer may form a lattice pattern. The spacer may be formed of a silicon. The anti-adhesion layer may be a metallic film, an oxide film, or a nitride film.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract: An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract: A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.

Abstract: A varifocal lens structure, a method of manufacturing the varifocal lens structure, an optical lens module, and a method of manufacturing the optical lens module. The varifocal lens structure includes a liquid lens unit including a silicone membrane that includes a first silicone elastomer, a polymer actuator disposed on an upper surface of the silicone membrane, and an adhesive silicone layer that is disposed between the silicone membrane and the polymer actuator and includes a second silicone elastomer.

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract: A bonded substrate structure includes a siloxane-based monomer layer between a first substrate and a second substrate, the siloxane-based monomer layer bonding the first substrate and the second substrate. The first substrate and the second substrate may be one of a silicon substrate and a silicon oxide substrate, respectively.