Patents by Inventor Jeong-Gyu SONG
Jeong-Gyu SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11778805Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: GrantFiled: February 4, 2022Date of Patent: October 3, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyooho Jung, Jeong-Gyu Song, Younsoo Kim, Jooho Lee
-
Patent number: 11641730Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: GrantFiled: December 22, 2021Date of Patent: May 2, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyooho Jung, Jeong-Gyu Song, Younsoo Kim, Jooho Lee
-
Patent number: 11600621Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: GrantFiled: August 26, 2021Date of Patent: March 7, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyooho Jung, Younsoo Kim, Young-lim Park, Jeong-Gyu Song, Se Hyoung Ahn, Changmu An
-
Publication number: 20220157823Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: ApplicationFiled: February 4, 2022Publication date: May 19, 2022Inventors: Kyooho JUNG, Jeong-gyu SONG, Younsoo KIM, Jooho LEE
-
Publication number: 20220115380Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Inventors: Kyooho Jung, Jeong-Gyu Song, Younsoo Kim, Jooho Lee
-
Patent number: 11239239Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: GrantFiled: February 20, 2020Date of Patent: February 1, 2022Inventors: Kyooho Jung, Jeong-Gyu Song, Younsoo Kim, Jooho Lee
-
Publication number: 20210391333Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: ApplicationFiled: August 26, 2021Publication date: December 16, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyooho JUNG, Younsoo KIM, Young-Lim PARK, Jeong-Gyu SONG, Se Hyoung AHN, Changmu AN
-
Publication number: 20210384197Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: ApplicationFiled: August 20, 2021Publication date: December 9, 2021Inventors: Kyooho Jung, Jeong-Gyu Song, Younsoo Kim, Jooho Lee
-
Patent number: 11133314Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: GrantFiled: June 10, 2020Date of Patent: September 28, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Kyooho Jung, Younsoo Kim, Young-lim Park, Jeong-Gyu Song, Se Hyoung Ahn, Changmu An
-
Publication number: 20210134804Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: ApplicationFiled: June 10, 2020Publication date: May 6, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyooho JUNG, Younsoo KIM, Young-lim PARK, Jeong-Gyu SONG, Se Hyoung AHN, Changmu AN
-
Publication number: 20200395364Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.Type: ApplicationFiled: February 20, 2020Publication date: December 17, 2020Inventors: KYOOHO JUNG, JEONG-GYU SONG, YOUNSOO KIM, JOOHO LEE
-
Patent number: 10309009Abstract: Disclosed is a carbon thin-film device and method for manufacturing the same. The method includes forming a functional group on a surface of a substrate and functionalizing the substrate, and depositing a carbon thin film through ALD on the substrate in which the functional group is formed.Type: GrantFiled: April 4, 2016Date of Patent: June 4, 2019Assignee: Industry-Academic Cooperation Foundation, Yonsei UniversityInventors: Hyungjun Kim, Taejin Choi, Jeong-Gyu Song
-
Patent number: 9781838Abstract: Provided are a gas sensor and a method of manufacturing the same. The gas sensor may include a transition metal chalcogenide layer on a substrate, a metal nano material on the transition metal chalcogenide layer, and an electrode on the transition metal chalcogenide layer with the metal nano material.Type: GrantFiled: February 23, 2015Date of Patent: October 3, 2017Assignee: Industry-Academic Cooperation Foundation, Yonsei UniversityInventors: Hyungjun Kim, Kyung Yong Ko, Jeong-Gyu Song
-
Patent number: 9644263Abstract: Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness.Type: GrantFiled: November 4, 2015Date of Patent: May 9, 2017Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITYInventors: Hyungjun Kim, Youngjun Kim, Jeong-Gyu Song, Jusang Park
-
Publication number: 20160289825Abstract: Disclosed is a carbon thin-film device and method for manufacturing the same. The method includes forming a functional group on a surface of a substrate and functionalizing the substrate, and depositing a carbon thin film through ALD on the substrate in which the functional group is formed.Type: ApplicationFiled: April 4, 2016Publication date: October 6, 2016Inventors: Hyungjun KIM, Taejin CHOI, Jeong-Gyu SONG
-
Publication number: 20160122868Abstract: Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness.Type: ApplicationFiled: November 4, 2015Publication date: May 5, 2016Inventors: Hyungjun KIM, YOUNGJUN KIM, Jeong-Gyu SONG, Jusang PARK
-
Publication number: 20160056039Abstract: Example embodiments of the inventive concept relate to a method of forming a metal sulfide alloy. The method may include forming a metal oxide alloy on a substrate using an ALD process and transforming the metal oxide alloy to a metal sulfide alloy.Type: ApplicationFiled: May 4, 2015Publication date: February 25, 2016Inventors: Hyungjun KIM, Jeong-Gyu SONG, Jusang PARK
-
Publication number: 20150241386Abstract: Provided are a gas sensor and a method of manufacturing the same. The gas sensor may include a transition metal chalcogenide layer on a substrate, a metal nano material on the transition metal chalcogenide layer, and an electrode on the transition metal chalcogenide layer with the metal nano material.Type: ApplicationFiled: February 23, 2015Publication date: August 27, 2015Inventors: Hyungjun KIM, Kyung Yong KO, Jeong-Gyu SONG