Abstract: Discussed is a display device including a base portion; assembly electrodes that extend in one direction and are disposed on the base portion at predetermined intervals; a dielectric layer deposited on the base portion to cover the assembly electrodes; a first wiring electrode that extends in the same direction as the assembly electrodes and is disposed on the dielectric layer so as not to overlap the assembly electrodes; a partition wall portion deposited on the dielectric layer while arranging cells at predetermined intervals to overlap the assembly electrodes and the first wiring electrode along an extension direction of the assembly electrodes; and semiconductor light-emitting elements seated in the cells, respectively, wherein a solder layer electrically connecting a semiconductor light-emitting element seated in a cell and the first wiring electrode overlapping the cell is filled in the cell from among the plurality semiconductor light emitting elements and the cells.

Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing.

Abstract: The display device can comprise a first wiring, a second wiring disposed on a different layer from the first wiring, a pad disposed on the same layer as the second wiring and that vertically overlaps the first wiring, and on the pad and the second wiring. It is disposed and can comprise an insulating layer having an assembly hole, and a semiconductor light emitting device disposed on a pad and a second wiring within the assembly hole. The embodiment prevents separation of the semiconductor light emitting device, improves the light efficiency of the semiconductor light emitting device to implement high luminance, and significantly improves light efficiency, thereby implementing further improved high resolution.

Abstract: The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate.

Abstract: The present disclosure is applicable to a technical field related to display devices, and relates to a display device using, for example, a micro light emitting diode (LED), and a manufacturing method therefor. The present disclosure may comprise: a substrate; a partition defining a unit pixel region; a first electrode located in the unit pixel region; a semiconductor light-emitting element electrically connecting a first-type electrode to the first electrode and provided in the unit pixel region; an inclined a layer formed on the semiconductor light-emitting element and the partition, and having a high incline on the semiconductor light-emitting element; and a second electrode electrically connected, on the inclined coating layer, to a second-type electrode of the semiconductor light-emitting element.

Abstract: The present invention is applicable to display device-related technical fields and, for example, relates to a display device using micro LED (Light Emitting Diode) and a method of manufacturing the same. The present invention includes a substrate including a pixel area and a pad area located around the pixel area; a barrier layer located on the substrate and defining a plurality of unit pixel areas within the pixel area; a stress separation line located between the unit pixel areas on the barrier layer; a first electrode located in the unit pixel area; a semiconductor light emitting device in which a first type electrode is electrically connected to the first electrode within the unit pixel area; a coating layer formed on the semiconductor light emitting device and the barrier layer; and a second electrode electrically connected to the type second electrode of the semiconductor light emitting device on the coating layer.

Abstract: The embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment can include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed therebetween, a passivation layer disposed on the light emitting structure, and a second electrode layer disposed under the light emitting structure. The light emitting structure may include a rounding semiconductor layer in which an upper surface thereof is partially rounded.

Abstract: Discussed is a display device including a semiconductor light emitting device. A display device can include a substrate, first assembly electrodes, second assembly electrodes and the first assembly electrodes spaced apart from each other on the substrate, an insulating layer disposed on the second assembly electrode, an assembly barrier wall including a predetermined assembly hole and disposed on the insulating layer, a plating layer electrically connected to the first assembly electrode and the second assembly electrode, and a semiconductor light emitting device disposed in the assembly hole and electrically connected to the first assembly electrode and the second assembly electrode by the plating layer.

Abstract: A display apparatus according to the present invention comprises a substrate including semiconductor light-emitting devices and a wiring electrode electrically connected to the semiconductor light-emitting devices, wherein the substrate comprises: a base portion; assembly electrodes extending in one direction and arranged on the base portion; a dielectric layer formed to cover the assembly electrodes; a barrier portion formed on the dielectric layer while forming a cell on which the semiconductor light-emitting devices are mounted along an extension direction of the assembly electrodes; and a planarization layer formed to cover the barrier portion while forming a hole overlapping the cell, wherein the hole comprises: a first hole exposing the semiconductor light-emitting device; and a second hole exposing the dielectric layer or the base portion.

Abstract: The present invention relates to a display apparatus, specifically to a display apparatus using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size. The present invention provides a display apparatus comprising: a base part; a partition part having a plurality of grooves; a plurality of semiconductor light-emitting elements arranged on the base part and mounted in the plurality of grooves; first and second wiring electrodes arranged on one side and the other side of each of the semiconductor light-emitting elements, respectively; an assembly electrode arranged on the base part and arranged on the one side of each of the semiconductor light-emitting elements; and a dielectric layer arranged on the base part and arranged between the assembly electrode and the first wiring electrode, wherein each of the plurality of grooves includes at least one recess portion formed in the horizontal direction with respect to the base part.

Abstract: Discussed is a display device including a base portion; assembly electrodes that extend in one direction and are disposed on the base portion at predetermined intervals; a dielectric layer deposited on the base portion to cover the assembly electrodes; a first wiring electrode that extends in the same direction as the assembly electrodes and is disposed on the dielectric layer so as not to overlap the assembly electrodes; a partition wall portion deposited on the dielectric layer while arranging cells at predetermined intervals to overlap the assembly electrodes and the first wiring electrode along an extension direction of the assembly electrodes; and semiconductor light-emitting elements seated in the cells, respectively, wherein a solder layer electrically connecting a semiconductor light-emitting element seated in a cell and the first wiring electrode overlapping the cell is filled in the cell from among the plurality semiconductor light emitting elements and the cells.

Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing.

Abstract: The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate.

Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.