Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third co

Abstract: An image sensor includes a first semiconductor substrate, a photoelectric conversion region in the first semiconductor substrate, and a buried insulating film on the first semiconductor substrate. The buried insulating film covers a first region of the first semiconductor substrate and exposes a second region of the first semiconductor substrate. The sensor includes a second semiconductor substrate on the buried insulating film, an operating gate structure defining a first channel of a first conductive type in the second semiconductor substrate, and a transfer gate structure defining a second channel of a second conductive type different from the first conductive type in the second region of the first semiconductor substrate.

Abstract: An image sensor is provided, the image sensor comprises a first semiconductor substrate; a photoelectric conversion layer in the first semiconductor substrate; a color filter on a first surface of the first semiconductor substrate; a micro lens covering the color filter; a first transistor on the first semiconductor substrate; a first insulating layer on a second surface; a second semiconductor substrate in contact with the first insulating layer, the second semiconductor substrate including a gate trench exposing at least a portion of the first gate structure; a second transistor on the second semiconductor substrate; a second insulating layer on the fourth surface; and a metal layer in the second insulating layer.

Abstract: Provided is an imaging device for mobile devices such as a mobile phone, using a high resolution image sensor such as a charge coupled device (CCD) and a complementary metal oxide semiconductor (CMOS).

Abstract: Provided is an imaging device for mobile devices such as a mobile phone, using a high resolution image sensor such as a charge coupled device (CCD) and a complementary metal oxide semiconductor (CMOS).