Abstract: An autonomous driving apparatus and a method for generating a precise map using the autonomous driving apparatus are configured to vary an application ratio of interpolation to precise map data to be stored depending on an accident risk on a corresponding road and a distance from a host vehicle during driving so as to optimize the precise map data to be stored. The autonomous driving apparatus includes an accident risk classification unit configured to vary the application ratio of interpolation to data and whether or not to store data acquired by applying interpolation to the data depending on the accident risk on the corresponding road and the distance from the host vehicle during driving, and an autonomous driving controller configured to generate the precise map data depending on the accident risk classification unit.

Abstract: The present disclosure provides a compound of following formula and an organic light emitting device and an organic light emitting display device including the compound. The compound of the present disclosure serves as a host or a dopant in an emitting material layer.

Abstract: Disclosed is a composition for promoting hair growth and ameliorating, preventing or treating hair loss containing 2?-fucosyllactose (2?-FL) as an active ingredient, and a method for promoting hair growth or ameliorating, preventing or treating hair loss, the method comprising administering to a subject in need thereof 2?-fucosyllactose. Treatment with a combination of testosterone and 2?-fucosyllactose increases hair gloss, increases hair length, reduces a hair loss area, enhances hair cuticles, increases the number and size of hair follicles, and improves expression of proteins and genes related to hair proliferation and growth, compared to treatment with testosterone alone, thus being applicable as a substance for various food and pharmaceutical compositions based on effects of promoting hair growth, improving hair loss, and ameliorating, preventing or treating hair loss.

Abstract: A method for fabricating a display device includes providing a substrate into a chamber; forming an active material layer on the substrate by a plurality of deposition processes in the chamber; forming an active layer by patterning the active material layer: forming a transistor including a gate electrode overlapping the active layer; and forming a pixel electrode on the transistor, at least two deposition processes among the plurality of deposition processes are performed by applying different magnitudes of power, respectively.

Abstract: The present disclosure relates to a separator and a method of manufacturing the separator. The separator includes a porous support and a hydrophilic polymer applied to the surface of the porous support through a solution including the hydrophilic polymer and a solvent, and satisfies the following Equation: 0.015?(C*D)/(A*B)?0.65, where A is a thickness (?m) of the porous support, B is an air permeability (Gurley, seconds/100 ml) of the porous support, C is a porosity (% by volume) of the porous support, and D is a content (% by weight) of the hydrophilic polymer in the solution.

Abstract: A method for evaluating an accelerated idle life of a secondary battery, includes an evaluation condition input process including inputting an idle temperature and a measurement period for a reference performance test to evaluate the accelerated idle life of the secondary battery, a data computation process including computing an evaluation period, in which a state of health of the secondary battery reaches a set range, a capacity degradation rate, and a direct current internal resistance change rate, and an acceleration factor calculation process including calculating an acceleration factor of the secondary battery using a first equation that the acceleration factor is equal to the direct current internal resistance change rate divided by a capacity degradation rate.

Abstract: Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.

Abstract: Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include Ag3Sn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

Abstract: Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.

Abstract: Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include Ag3Sn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.

Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.

Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.

Abstract: The present invention features a DMB System for reducing scan time, and a method for the same, wherein, the DBM system comprises a DMB receiving unit and a TPEG-only receiving unit, and is able to reducing scan time for total channels by performing a scanning process for total channels together by the DMB receiving unit and the TPEG-only receiving unit, respectively.

Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.

Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.

Abstract: A light sensing circuit capable of enhancing a reliability by lowering a dependency on a temperature change without using a resistor, a backlight control apparatus having the same, and an LCD device having the same. The light sensing circuit includes a first MOS-transistor; and a second MOS-transistor serially connected to the first MOS-transistor between a first power terminal and a ground terminal, in which a second power terminal is connected to each gate terminal of the first MOS-transistor and the second MOS-transistor, and an optical amount detecting terminal is connected to a common connection point between a drain terminal of the first MOS-transistor and a source terminal of the second MOS-transistor.