Patents by Inventor Jeongwoo YANG

Jeongwoo YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POWER DEVICE INCLUDING METAL LAYER
    Publication number: 20220359426
    Abstract: A power semiconductor device includes a substrate having an edge, an insulating layer disposed over the substrate, a metal layer disposed over the insulating layer and including a first portion and a second portion, a coating layer disposed over the metal layer, and a protective layer covering the substrate, the insulating layer, the metal layer, and the coating layer. The first portion has a first thickness and the second portion has a second thickness that is greater than the first thickness, and the second portion is disposed farther apart from the edge of the substrate than the first portion.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Bongyong LEE, Bohee KANG, Doojin CHOI, Kyeongseok PARK, Thomas NEYER, Jeongwoo YANG
  • Power device including metal layer
    Patent number: 11398437
    Abstract: A power semiconductor device includes a substrate having an edge, an insulating layer disposed over the substrate, a metal layer disposed over the insulating layer and including a first portion and a second portion, a coating layer disposed over the metal layer, and a protective layer covering the substrate, the insulating layer, the metal layer, and the coating layer. The first portion has a first thickness and the second portion has a second thickness that is greater than the first thickness, and the second portion is disposed farther apart from the edge of the substrate than the first portion.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: July 26, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Bongyong Lee, Bohee Kang, Doojin Choi, Kyeongseok Park, Thomas Neyer, Jeongwoo Yang
  • POWER DEVICE INCLUDING METAL LAYER
    Publication number: 20210183788
    Abstract: A power semiconductor device includes a substrate having an edge, an insulating layer disposed over the substrate, a metal layer disposed over the insulating layer and including a first portion and a second portion, a coating layer disposed over the metal layer, and a protective layer covering the substrate, the insulating layer, the metal layer, and the coating layer. The first portion has a first thickness and the second portion has a second thickness that is greater than the first thickness, and the second portion is disposed farther apart from the edge of the substrate than the first portion.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Bongyong LEE, Bohee KANG, Doojin CHOI, Kyeongseok PARK, Thomas NEYER, Jeongwoo YANG