Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices.

Abstract: Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.