Abstract: Disclosed is a display device and a method of manufacturing the same having improved reliability. In the display device, at least one of a plurality of dielectric films disposed between an oxide semiconductor layer and a light-emitting device includes a lower region disposed on the oxide semiconductor layer and an upper region disposed on the lower region, the upper region including a trap element configured to trap hydrogen, whereby reliability of a thin film transistor including the oxide semiconductor layer is improved.

Abstract: Disclosed is a display device and a method of manufacturing the same having improved reliability. In the display device, at least one of a plurality of dielectric films disposed between an oxide semiconductor layer and a light-emitting device includes a lower region disposed on the oxide semiconductor layer and an upper region disposed on the lower region, the upper region including a trap element configured to trap hydrogen, whereby reliability of a thin film transistor including the oxide semiconductor layer is improved.

Abstract: A thin film transistor includes a gate electrode on a substrate. The gate electrode includes a flat portion and an inclined portion at a side of the flat portion. A ratio of a height to a width (height/width) of the inclined portion is 1.192 or less. The thin film transistor also includes a gate insulating layer disposed on the substrate to cover the gate electrode and a polysilicon active layer on the gate insulating layer and over the gate electrode. The thin film transistor further includes a source electrode and a drain electrode respectively connected to two opposite end portions of the polysilicon active layer.

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract: A thin film transistor includes a gate electrode on a substrate. The gate electrode includes a flat portion and an inclined portion at a side of the flat portion. A ratio of a height to a width (height/width) of the inclined portion is 1.192 or less. The thin film transistor also includes a gate insulating layer disposed on the substrate to cover the gate electrode and a polysilicon active layer on the gate insulating layer and over the gate electrode. The thin film transistor further includes a source electrode and a drain electrode respectively connected to two opposite end portions of the polysilicon active layer.

Abstract: A pulse width modulation (PWM) circuit comprising an input circuit, first and second controllers, and first and second Schmidt triggers. The first controller sets a first voltage level by a first current generated responding to an input signal and an output of the input circuit. The first Schmidt trigger sets a first logic level when an output of the first controller reaches the first voltage level. The second controller sets a second voltage level by a second current generated responding to the input signal and an output of the first Schmidt trigger. The second Schmidt trigger generates a PWM output signal with a variable frequency in accordance with the first and second currents.

Abstract: A digital audio amplifier, an audio system including the same and a method of amplifying an audio signal that can reduce switching noise interference generated in a pulse width modulator are provided. The digital audio amplifier includes a selection circuit, a digital signal processor and a pulse width modulator. The selection circuit selects one of an audio data signal and a digitized broadcasting signal to output a digital input signal. The digital signal processor samples the digital input signal using one of a plurality of oversampling frequencies based on a local oscillator output signal and a separation signal to output a sampled digital signal. The pulse width modulator performs a pulse width modulation on the sampled digital signal.

Abstract: A pulse width modulation (PWM) circuit comprising an input circuit, first and second controllers, and first and second Schmidt triggers. The first controller sets a first voltage level by a first current generated responding to an input signal and an output of the input circuit. The first Schmidt trigger sets a first logic level when an output of the first controller reaches the first voltage level. The second controller sets a second voltage level by a second current generated responding to the input signal and an output of the first Schmidt trigger. The second Schmidt trigger generates a PWM output signal with a variable frequency in accordance with the first and second currents.

Abstract: A pulse width modulation (PWM) circuit comprising an input circuit, first and second controllers, and first and second Schmidt triggers. The first controller sets a first voltage level by a first current generated responding to an input signal and an output of the input circuit. The first Schmidt trigger sets a first logic level when an output of the first controller reaches the first voltage level. The second controller sets a second voltage level by a second current generated responding to the input signal and an output of the first Schmidt trigger. The second Schmidt trigger generates a PWM output signal with a variable frequency in accordance with the first and second currents.

Abstract: A pulse width modulation (PWM) circuit comprising an input circuit, first and second controllers, and first and second Schmidt triggers. The first controller sets a first voltage level by a first current generated responding to an input signal and an output of the input circuit. The first Schmidt trigger sets a first logic level when an output of the first controller reaches the first voltage level. The second controller sets a second voltage level by a second current generated responding to the input signal and an output of the first Schmidt trigger. The second Schmidt trigger generates a PWM output signal with a variable frequency in accordance with the first and second currents.