Abstract: There is disclosed a method of forming a nickel film on a silicon substrate or a silicon film, followed by applying an annealing process such that a final annealing temperature TH is in the range of 500° C.<TH?600° C. to form a nickel-silicon compound, the method comprising a first annealing step of, by using an annealing device configured to change an annealing temperature in a stepwise manner, heating the substrate up to a first annealing temperature close to 400° C., followed by annealing the substrate at the first annealing temperature for a predetermined period, and a second annealing step of, by using the annealing device, heating the substrate up to a second annealing temperature which is the final annealing temperature TH, followed by annealing the substrate at the second annealing temperature for a predetermined period.

Abstract: A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound containing silicon.