Abstract: A detecting device for biochemical detections is provided. The detecting device includes a first substrate, a magnetic layer located on the first substrate, an isolation layer located on the magnetic layer, at least a first electrode located on the isolation layer, a first dielectric layer located on the first electrode, a first hydrophobic layer located on the first dielectric layer, a second substrate, at least a second electrode located on the second substrate and having a cathode and an anode, a second dielectric layer located on the second electrode' and a second hydrophobic layer located on the second dielectric layer. The first electrode is zigzag-shaped, and the cathode and the anode of the second electrode are comb-shaped and interlaced with each other.

Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

Abstract: A detecting device for biochemical detections is provided. The detecting device includes a first substrate, a magnetic layer located on the first substrate, an isolation layer located on the magnetic layer, at least a first electrode located on the isolation layer, a first dielectric layer located on the first electrode, a first hydrophobic layer located on the first dielectric layer, a second substrate, at least a second electrode located on the second substrate and having a cathode and an anode, a second dielectric layer located on the second electrode and a second hydrophobic layer located on the second dielectric layer. The first electrode is zigzag-shaped, and the cathode and the anode of the second electrode are comb-shaped and interlaced with each other.

Abstract: The present invention provides a fabrication process that integrates high-aspect-ratio silicon structures with polysilicon surface micromachined structures. In some embodiments the process includes forming an oxide block by etching a plurality of trenches to leave a plurality of vertical-walled silicon structures standing on the substrate, thermally and substantially completely oxidizing the vertical-walled silicon structures, and substantially filling spaces between the oxidized vertical-walled silicon structures with an oxide of silicon to form the oxide block. The process retains not only the high-aspect-ratio silicon structures possible with deep reactive ion etching (DRIE) but also the design flexibility of polysilicon surface micromachining. Using this process, polysilicon platforms have been fabricated, which are actuated by high-aspect-ratio combdrives for many applications such as x-y-z stages and scanning devices.