Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

Abstract: An electrically blowable fuse structure usable with organic insulators in microelectronic parts is provided. The fuse structure is made of a first heat resistant member, a fusing element and a second heat resistant member. The heat resistant members are in substantial contact with the fuse and thermally insulate the fuse from the organic insulator. The ends of each fuse are electrically connected to a pair conductors.A process for fabricating an electrically blowable fuse structure usable with an organic insulator is provided. A substrate with an organic insulator coating and containing electrically conductive features with exposed contacts is provided. A heat shield layer and a fuse layer are deposited sequentially and patterned by subtractive etching. Plurality of conductors are formed over so as to electrically connect each fuse element to a pair of conductors. A second heat resistant member is formed over the fuse area and the substrate is subsequently quoted with an organic insulator.

Abstract: An electrically blowable fuse structure usable with organic insulators in microelectronic parts is provided. The fuse structure is made of a first heat resistant member, a fusing element and a second heat resistant member. The heat resistant members are in substantial contact with the fuse and thermally insulate the fuse from the organic insulator. The ends of each fuse are electrically connected to a pair conductors.

Abstract: A photoresist composition is disclosed which is a mixture of a photoactive compound and an alkali soluble resin binder comprises of an unsaturated dicarboxylic acid esterified polymeric material, such as a phenolic resin containing a plurality of acid esterifiable groups esterified with an unsaturated dicarboxylic acid anhydride having the formula ##STR1## wherein R.sub.1 and R.sub.2 are independently selected from hydrogen and alkyl groups containing 1 to 3 carbon atoms, R.sub.3 and R.sub.4 are alkylene groups containing 1 to 3 carbon atoms and x and y are either 0 or 1.

Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.