Patents by Inventor Jerald Allan Hallmark

Jerald Allan Hallmark has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
    Patent number: 6479173
    Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−xOx]2, where M is a metal and X is 0≦X<1.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: November 12, 2002
    Assignee: Motorola, Inc.
    Inventors: Zhiyi Yu, Jun Wang, Ravindranath Droopad, Alexander Demkov, Jerald Allan Hallmark, Jamal Ramdani