Abstract: Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed by exposing the substrate to a ruthenium precursor and an optional co-reactant such that the amine-containing compound facilitates the nucleation on the dielectric surface.

Abstract: A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface.

Abstract: Methods for protecting an exposed copper surface of a partially fabricated IC from oxidation during exposure to an oxygen-containing environment are disclosed. The methods involve treating the exposed copper surface with a metallocene compound in order to minimize formation of copper oxide on the exposed surface, and exposing the copper surface to an oxygen-containing environment.

Abstract: A reactor vessel is provided with a solvent in a supercritical PVT state for use in depositing films on a deposition substrate. A metal organic precursor is dissolved in the supercritical solvent, as is a reaction agent. A chemical reaction deposits a film, such as a metal film on a semiconducting wafer, and reaction byproducts including a ligand ensue from the chemical reaction. Effluent from the reactor vessel is submitted to a precursor-forming agent that reacts with the ligand to rejuvenate the precursor. Alternatively, the precursor-forming agent can be used for point-of-use formation of the precursor with or without recycle of reaction byproducts.

Abstract: Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed by exposing the substrate to a ruthenium precursor and an optional co-reactant such that the amine-containing compound facilitates the nucleation on the dielectric surface.

Abstract: A method for providing a precursor to a supercritical processing chamber is provided. The precursor in solid form is provided in an ampoule external to the supercritical processing chamber. A fluid is provided to the ampoule, where at least a portion of the gas enters the solid precursor causing a melting point of the precursor to be depressed and thereby causing the solid precursor to melt. The melted precursor is delivered to the supercritical process chamber.

Abstract: A reactor vessel is provided with a solvent in a supercritical PVT state for use in depositing films on a deposition substrate. A metal organic precursor is dissolved in the supercritical solvent, as is a reaction agent. A chemical reaction deposits a film, such as a metal film on a semiconducting wafer, and reaction byproducts including a ligand ensue from the chemical reaction. Effluent from the reactor vessel is submitted to a precursor-forming agent that reacts with the ligand to rejuvenate the precursor. Alternatively, the precursor-forming agent can be used for point-of-use formation of the precursor with or without recycle of reaction byproducts.

Abstract: The present invention pertains to methods for forming metal-derived layers on substrates. Preferred methods apply to integrated circuit fabrication. In particular, selective methods may be used to form diffusion barriers on partially fabricated integrated circuits. In one preferred method, a wafer is heated and exposed to a metal vapor. Under specific conditions, the metal vapor reacts with dielectric surfaces to form a diffusion barrier, but does not react with metal surfaces. Thus, methods of the invention form diffusion barriers that selectively protect dielectric surfaces but leave metal surfaces free of diffusion barrier.