Abstract: The present disclosure provides, inter alia, a polymer and oil composition comprising a polymer component, and a synthetic hydrocarbon process oil with a unique branching composition which can be derived from naturally occurring sustainable sources.

Abstract: The present disclosure relates to semiconductor devices and manufacturing techniques in which topography-related contact failures may be reduced by providing a dielectric fill material in a late manufacturing stage. In sophisticated semiconductor devices, the material loss in the trench isolation regions may result in significant contact failures, which may be reduced by levelling the device topography, thereby tolerating a significant lateral overlap of contact elements with trench isolation regions.

Abstract: The present disclosure relates to semiconductor devices and manufacturing techniques in which topography-related contact failures may be reduced by providing a dielectric fill material in a late manufacturing stage. In sophisticated semiconductor devices, the material loss in the trench isolation regions may result in significant contact failures, which may be reduced by levelling the device topography, thereby tolerating a significant lateral overlap of contact elements with trench isolation regions.

Abstract: A self-regulating tire valve for use in pneumatic tires. The self-regulating tire valve includes a tubular housing with a primary channel extending therethrough, a threaded collar on one end of the tubular housing adapted to connect to a source of pressurized air, a cavity positioned adjacent to the primary channel, and a release passageway connecting to a release outlet positioned on the exterior of the tubular housing. A diverting block is positioned with a secondary channel extending therethrough that is moveably positioned within the cavity. When the secondary channel of the diverting block is aligned with the release passageway, air can flow from a second end to a first end of the secondary channel, through the release passageway and exit at the release outlet.

Abstract: A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation.

Abstract: A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation.

Abstract: A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.

Abstract: A self-regulating tire valve for use in pneumatic tires. The self-regulating tire valve includes a tubular housing with a primary channel extending therethrough, a threaded collar on one end of the tubular housing adapted to connect to a source of pressurized air, a cavity positioned adjacent to the primary channel, and a release passageway connecting to a release outlet positioned on the exterior of the tubular housing. A diverting block is positioned with a secondary channel extending therethrough that is moveably positioned within the cavity. When the secondary channel of the diverting block is aligned with the release passageway, air can flow from a second end to a first end of the secondary channel, through the release passageway and exit at the release outlet.

Abstract: Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure.

Abstract: A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.