Abstract: A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model, and a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.

Abstract: A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spray coat layer. The bond layer has a second thickness and a second thermal conductivity. A ceramic layer is arranged on the bond layer. At least one of the first thickness and the second thickness varies in at least one of a radial direction and an azimuthal direction such that a third thermal conductivity between the ceramic layer and the baseplate varies in the at least one of the radial direction and the azimuthal direction.

Abstract: A baseplate of a substrate support assembly includes a cavity between an upper region, a lower region, and sidewalls of the baseplate, a plurality of pillars arranged in the cavity between the upper and lower regions, an inlet to supply a liquid to the cavity, and an outlet to vent vapor of the liquid. In another implementation, a baseplate of a substrate support assembly includes a first channel arranged in the baseplate, a second channel arranged above the first channel, a plurality of vertical channels connecting the first channel to the second channel, an inlet to supply a liquid to the first channel, and an outlet to vent vapor of the liquid from the second channel.

Abstract: An electrostatic chuck (ESC) is provided. An ESC body is provided.

Abstract: A method for coating a component of a plasma processing chamber is provided. An electrolytic oxidation coating is formed over a surface of the component, wherein the electrolytic oxidation coating has a plurality of pores, wherein the electrolytic oxidation coating has a thickness and at least some of the plurality of pores extends through the thickness of the electrolytic oxidation coating. An atomic layer deposition is deposited on the electrolytic oxidation coating. The atomic layer deposition comprises a plurality of cycles, where each cycle comprises flowing a first reactant, wherein the first reactant forms a first reactant layer in the pores of the electrolytic oxidation coating, wherein the first reactant layer extends through the thickness of the electrolytic oxidation coating, stopping the flow of the first reactant, flowing a second reactant, wherein the second reactant reacts with the first reactant layer, and stopping the flow of the second reactant.

Abstract: A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model, and a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.