Patents by Inventor Jeremy J. Goeckeritz

Jeremy J. Goeckeritz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9389244
    Abstract: A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: July 12, 2016
    Assignee: Applied Nanostructures, Inc.
    Inventors: Jeremy J. Goeckeritz, Gary D. Aden, Ami Chand, Josiah F. Willard
  • Publication number: 20140338075
    Abstract: A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.
    Type: Application
    Filed: May 6, 2014
    Publication date: November 13, 2014
    Applicant: APPLIED NANOSTRUCTURES, INC.
    Inventors: Jeremy J. Goeckeritz, Gary D. Aden, Ami Chand, Josiah F. Willard