Abstract: A silicon nitride layer having a silicon-rich sub-layer and a standard sub-layer is formed on a copper surface to obtain excellent electromigration characteristics due to the standard sub-layer that is in contact with the copper, while maintaining a superior diffusion barrier behavior due to the silicon-rich sub-layer. By combining these sub-layers, the overall thickness of the silicon nitride layer may be kept small compared to conventional silicon nitride barrier layers, thereby reducing the capacitive coupling of adjacent copper lines.

Abstract: Compounds of formula (1) are described in which Ra and Rb is each independently a hydrogen atom or a group Rc, or Ra and Rb together form an oxo (?O) or thio (?S) group; X is a N atom or an optionally substituted CH group: Y is a —O— or —S— atom or —SO— or —SO2— group or an optionally substituted —CH2— or —NH— group with the proviso that when Ra and Rb together form an oxo (?O) or thio (?S) group Y is an optionally substituted —CH2— or —NH-group; L1 is a covalent bond or a linker atom or group; p is zero or the integer 1; Alk1 is an optionally substituted C1-10aliphatic or C1-10heteroaliphatic chain; n is zero the integer 1, 2 or 3 with the proviso that when n is zero Y is an optionally substituted —CH2— group; Ar is an optionally substituted C6-12aromatic or C1-9heteroaromatic group; m is zero or the integer 1, 2 or 3; q is zero or the integer 1 or 2; R1, Rc and Rd are hydrogen atoms or the substituents described in the patent specification; and the salts, solvates, hydrates and N-oxides thereof.

Abstract: A hardener composition and pine bark tannin-containing resin composition are disclosed. The resin composition is formulated to neutral pH in order to reduce the extent of self-polymerisation and provide a satisfactory shelf life. The hardener composition may be mixed with a suitable resin, or the resin composition mixed with a suitable hardener to produce a cold set adhesive which is particularly useful for bonding wood.

Abstract: A pair of portable speaker enclosures; or, an enclosure connecting together two opposing sides by interlocking slider structures. A spring-loaded tension mechanism permits the sliding of said connector slider structures with respect to one another, for the extension thereof and the shortening thereof. The tension mechanism exerts a friction between the slider structures to hold the slider structures at a desired overlapping position to one another. One or more spring U-like clamps sized may be used to grip about the edge of a panel display to which the enclosures may be mounted are connected to each enclosure. The U-like clamps are mounted to the enclosures by various methods, whereby one of the methods utilizes a rubber-like non-slip sheet over the base web of each U-like clamp. When plural opposing enclosures are present, cable take-up reels may be employed between enclosures.

Abstract: Compounds of formulae (1a) and (1b) are described: in which the dashed line represents an optional bond; A is a —N? atom or a —N(Rb)—, —C(Rb)? or —C(Rb)(RC)— group; Ra, Rb and Rc is each independently a hydrogen atom or an optionally substituted C1-6alkyl group; X is an —O— or —S— atom or —NH— group or substituted N atom; each Y is independently a N atom or CH group or substituted C atom; n is zero or the integer 1; Alk1 is an optionally substituted aliphatic or heteroaliphatic chain L1 is a covalent bond or a linker atom or group; Cy1 is a hydrogen atom or an optionally substituted cycloaliphatic, polycycloaliphatic, heterocycloaliphatic, polyheterocycloaliphatic, aromatic or heteroaromatic group; Ar is an optionally substituted aromatic or heteroaromatic group; and the salts, solvates, hydrates and N-oxides thereof; The compounds are potent inhibitors of p38 kinase and are use in the prophylaxis or treatment of p38 kinase mediated diseases or disorders, such as rheumatoid arthritis

Abstract: A semiconductor component and a method for manufacturing the semiconductor component that mitigates electromigration and stress migration in a metallization system of the semiconductor component. A hardmask is formed over a dielectric layer and an opening is etched through the hardmask and into the dielectric layer. The opening is lined with a barrier layer and filled with an electrically conductive material. The electrically conductive material is planarized, where the planarization process stops on the barrier layer. Following planarization, the electrically conductive material is recessed using either an over-polishing process with highly selective copper slurry or a wet etching process to partially re-open the filled metal-filled trench or via. The recess process is performed such that the exposed portion of the electrically conductive material is below the dielectric layer.

Abstract: Compounds of formulae (1a) and (1b) are described: in which the dashed line represents an optional bond; A is a —N=atom or a —N(Rb)—, —C(Rb)═ or —C(Rb)(RC)— group; Ra, Rb and Rc is each independently a hydrogen atom or an optionally substituted C1-6alkyl group; X is an —O— or —S— atom or —NH— group or substituted N atom; each Y is independently a N atom or CH group or substituted C atom; n is zero or the integer 1; Alk1 is an optionally substituted aliphatic or heteroaliphatic chain L1 is a covalent bond or a linker atom or group; Cy1 is a hydrogen atom or an optionally substituted cycloaliphatic, polycycloaliphatic, heterocycloaliphatic, polyheterocycloaliphatic, aromatic or heteroaromatic group; Ar is an optionally substituted aromatic or heteroaromatic group; and the salts, solvates, hydrates and N-oxides thereof; The compounds are potent inhibitors of p38 kinase and are use in the prophylaxis or treatment of p38 kinase med

Abstract: Pyrimidines of formla (1) are described: 1

Abstract: Pyrimidines of formula (1) are described 1

Abstract: A silicon nitride layer having a silicon-rich sub-layer and a standard sub-layer is formed on a copper surface to obtain excellent electromigration characteristics due to the standard sub-layer that is in contact with the copper, while maintaining a superior diffusion barrier behavior due to the silicon-rich sub-layer. By combining these sub-layers, the overall thickness of the silicon nitride layer may be kept small compared to conventional silicon nitride barrier layers, thereby reducing the capacitive coupling of adjacent copper lines.

Abstract: Nucleotide derivatives of formula (1) are described: wherein: G is a hydrogen atom or an optionally substituted aliphatic, heteroaliphatic, cycloaliphatic, polycycloaliphatic, aromatic or heteroaromatic group or a non-natural nucleoside as defined herein; G′ is a non-natural necleoside as defined herein; n is zero, or the integer 1 or 2; m is zero or the integer 1 or 2; and the salts, solvates, hydrates and N-oxides thereof. The compounds are P2Y receptor agonists and are of use in the prophylaxis and treatment of diseases and disorders involving abnormal secretory mechanisms such as inadequate functioning of mucociliary clearance mechanisms or abnormal tear secretion or in the treatment of diseases involving inappropriate cellular glucose uptake.

Abstract: Pyrimidines of formla (1) are described: 1

Abstract: A Fluorine doped Silicon Oxide (SiO2)/Tantalum interface and method for manufacturing the same are provided that ensure the structural integrity of integrated circuits that include a Fluorine doped Silicon Oxide structure and a corresponding Tantalum barrier layer. The Fluorine doped Silicon Oxide (SiO2)/Tantalum interface comprises an amount of Silicon Nitride (SiN) in a surface region of a Fluorine doped Silicon Oxide structure. The concentration of Fluorine in the surface region is depleted with respect to a concentration of Fluorine in the remaining portion(s) of the Fluorine doped Silicon Oxide structure. The Fluorine doped Silicon Oxide (SiO2)/Tantalum interface also includes an amount of Tantalum Nitride (TaN) in the surface region. Finally, a Tantalum barrier layer is deposited over the surface region.

Abstract: Fused polycyclic 2-aminopyrimidines of formula (1): wherein Ar is an optionally substituted aromatic or heteroaromatic group; X is a carbon or nitrogen atom; Y is a carbon or nitrogen atom; Z is a linker group; A together with X and Y forms an optionally substituted monocyclic or bicyclic aromatic or heteroaromatic group; and the salts, solvates, hydrates and N-oxides thereof are described. The compounds are potent and selective inhibitors of the protein tyrosine kinases p56lck and p59fyn and are of use in the prophylaxis and treatment of immune diseases, hyperproliferative disorders and other diseases in which inappropriate p56lck and/or p59fyn activity is believed to have a role.

Abstract: Pyrimidines of formla (1) are described: wherein R1 is a —XR6 group; R2 and R3 which may be the same or different is each a hydrogen or halogen atom or a group selected from an optionally substituted aliphatic, cycloaliphatic, heteroaliphatic, heterocycloaliphatic, —OH, —OR10 [where R10 is an optionally substituted aliphatic, cycloaliphatic, heteroaliphatic, heterocycloaliphatic, aromatic or heteroaromatic group] —SH, —NO2, —CN, —SR10, —COR10, S(O)R10, —SO2R8, —SO2N(R8)(R9), —CO2R8, —CON(R8)(R9), —CSN(R8)(R9), —NH2 or substituted amino group; R4 is a X1R11 group where X1 is a covalent bond or a —C(R12)(R13)— [where each of R12 and R13 is a hydrogen or halogen atom or a hydroxyl, alkyl or haloalkyl group] or —C(O)— group and R11 is an optionally substituted phenyl, thienyl, thiazolyl or indolyl group; R5 is a halogen atom or an alkynyl group; and the salts, solv

Abstract: Pyrimidines of formula (1) are described wherein Ar is an optionally substituted aromatic or heteroaromatic group; R1 is a hydrogen atom or a straight or branched chain alkyl group; R2 is a —X1—R3 group where X1 is a direct bond or a linker atom or group, and R3 is an optionally substituted aliphatic, cycloaliphatic, heteroaliphatic, heterocycloaliphatic, aromatic or heteroaromatic group; and the salts, solvates, hydrates and N-oxides thereof. The compounds are selective KDR Kinase and/or FGFr Kinase inhibitors and are of use in the prophylaxis and treatment of disease states assoicated with angiogenesis.

Abstract: Pyrimidines of formula (1) are described 1

Abstract: Degradation of organic low-k interlayer dielectrics during fabrication is substantially prevented or significantly reduced by treatment with a plasma containing a source of hydrogen and N2. Embodiments include treating a SiCOH, such as Black Diamond®, ILD with a NH3/N2 plasma after deposition, after forming a damascene opening therein and/or after CMP but prior to capping layer deposition.

Abstract: Compounds of general formula (1) are described: wherein R1 is a hydrogen or halogen atom or an optionally substituted straight or branched chain alkyl, alkenyl or alkynyl group or a group selected from hydroxyl (—OH), substituted hydroxyl, thiol (—SH), substituted thiol, amino (—NH2), or substituted amino; R2 and R3, which may be the same or different, is each an optionally substituted straight or branched chain alkyl, alkenyl or alkynyl group; R4 is a hydrogen atom or a straight or branched chain alkyl group; R5 is a hydrogen atom or an optionally substituted straight or branched chain alkyl, alkenyl or alkynyl group; R6 is a hydrogen or halogen atom or an amino (—NH2), substituted amino, nitro, carboxyl (—CO2H) or esterified carboxyl group or a group —X1—R6a where X1 is a direct bond or a linker atom or group and R6a is an optionally substituted straight or branched chain alkyl, alkenyl or alkynyl group; X is a direct bond or a linker atom or

Abstract: Fused polycyclic 2-aminopyrimidines of formula (1) are described: whereinR.sup.1 is a group --L.sup.1 R.sup.2 where L.sup.1 is a covalent bond or a linker atom or group and R.sup.2 is a group --(Alk).sub.m L.sup.2 R.sup.3 where Alk is an optionally substituted aliphatic or heteroaliphatic chain, m is zero or the integer 1, L.sup.2 is a covalent bond or a linker atom or group and R.sup.3 is an optionally substituted cycloaliphatic or heterocycloaliphatic group provided that when m is zeroL.sup.2 is a covalent bond;Ar is an aryl or heteroaryl group;X is a carbon or nitrogen atom;Y is a carbon or nitrogen atom;Z is a linker group;A together with X and Y forms an optionally substituted monocyclic or bicyclic aromatic or heteroaromatic group;and the salts, solvates, hydrates and N-oxides thereof.