Patents by Inventor Jeremy Middleton

Jeremy Middleton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterojunction bipolar transistor device with electrostatic discharge ruggedness
    Patent number: 8193609
    Abstract: A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: June 5, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Timothy Henderson, Jeremy Middleton, John Hitt
  • HBT/FET process integration
    Patent number: 7977708
    Abstract: A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: July 12, 2011
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Timothy Henderson, Jeremy Middleton, Sumir Varma, Corey Jordan, Gerard Mahoney, Bradley Avrit, Lucius Rivers
  • HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE WITH ELECTROSTATIC DISCHARGE RUGGEDNESS
    Publication number: 20090283802
    Abstract: A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.
    Type: Application
    Filed: May 15, 2008
    Publication date: November 19, 2009
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Timothy Henderson, Jeremy Middleton, John Hitt
  • Bipolar junction transistor geometry
    Publication number: 20050167747
    Abstract: Embodiments of methods, apparatus, devices and/or systems associated with bipolar junction transistor are disclosed.
    Type: Application
    Filed: January 30, 2004
    Publication date: August 4, 2005
    Inventors: Thomas Apel, Jeremy Middleton