Patents by Inventor Jeremy MOEYAERT

Jeremy MOEYAERT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and density
    Patent number: 12255066
    Abstract: A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.
    Type: Grant
    Filed: November 26, 2020
    Date of Patent: March 18, 2025
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, UNIVERSITE CLAUDE BERNARD LYON 1, ECOLE CENTRALE DE LYON, ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON
    Inventors: Pierre-Vincent Guenery, Thierry Baron, Jeremy Moeyaert
  • METHOD FOR PRODUCING NON-CONTIGUOUS METAL OXIDE SEMICONDUCTORS, OF UNIFORM AND CONTROLLED SIZE AND DENSITY
    Publication number: 20230360912
    Abstract: A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.
    Type: Application
    Filed: November 26, 2020
    Publication date: November 9, 2023
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, UNIVERSITE CLAUDE BERNARD LYON 1, ECOLE CENTRALE DE LYON, ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON
    Inventors: Pierre-Vincent GUENERY, Thierry BARON, Jeremy MOEYAERT