Patents by Inventor Jeremy S. Frei
Jeremy S. Frei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901342Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: GrantFiled: January 7, 2022Date of Patent: February 13, 2024Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Publication number: 20220130807Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: ApplicationFiled: January 7, 2022Publication date: April 28, 2022Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Patent number: 11222874Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: GrantFiled: February 12, 2019Date of Patent: January 11, 2022Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Publication number: 20210135067Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.Type: ApplicationFiled: January 11, 2021Publication date: May 6, 2021Inventors: Vladimir Odnoblyudov, Scott D. Schellhammer, Jeremy S. Frei
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Patent number: 10892384Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially, encapsulated in a dielectric material.Type: GrantFiled: June 14, 2018Date of Patent: January 12, 2021Assignee: Micron Technology, Inc.Inventors: Vladimir Odnoblyudov, Scott D. Schellhammer, Jeremy S. Frei
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Publication number: 20190189597Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: ApplicationFiled: February 12, 2019Publication date: June 20, 2019Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Patent number: 10242970Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: GrantFiled: May 19, 2016Date of Patent: March 26, 2019Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Publication number: 20180301602Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially, encapsulated in a dielectric material.Type: ApplicationFiled: June 14, 2018Publication date: October 18, 2018Inventors: Vladimir Odnoblyudov, Scott D. Schellhammer, Jeremy S. Frei
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Patent number: 10020432Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.Type: GrantFiled: February 9, 2015Date of Patent: July 10, 2018Assignee: Micron Technology, Inc.Inventors: Vladimir Odnoblyudov, Scott D. Schellhammer, Jeremy S. Frei
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Publication number: 20160336302Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: ApplicationFiled: May 19, 2016Publication date: November 17, 2016Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Patent number: 9362259Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: GrantFiled: June 12, 2015Date of Patent: June 7, 2016Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Patent number: 9230847Abstract: Engineered substrates having thermally opaque materials for preventing transmission of radiative energy during epitaxial growth processes and for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a thermally opaque material at an upper surface of a handle substrate and bonding an epitaxial formation structure on the handle substrate such that the thermally opaque material is between the epitaxial formation structure and the handle substrate. In various embodiments, the thermally opaque material at least partially blocks radiative heat transmission between the handle substrate and the epitaxial formation structure, for example, to provide increased accuracy of epitaxy process temperature measurements and/or increased uniformity of epitaxy growth characteristics across the engineered substrate.Type: GrantFiled: October 1, 2013Date of Patent: January 5, 2016Assignee: MICRON TECHNOLOGY, INC.Inventors: Joseph G. Coones, Jeremy S. Frei
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Publication number: 20150357314Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: ApplicationFiled: June 12, 2015Publication date: December 10, 2015Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Patent number: 9059380Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: GrantFiled: June 16, 2014Date of Patent: June 16, 2015Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Publication number: 20150155452Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.Type: ApplicationFiled: February 9, 2015Publication date: June 4, 2015Inventors: Vladimir Odnoblyudov, Scott D. Schellhammer, Jeremy S. Frei
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Publication number: 20150090956Abstract: Engineered substrates having thermally opaque materials for preventing transmission of radiative energy during epitaxial growth processes and for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a thermally opaque material at an upper surface of a handle substrate and bonding an epitaxial formation structure on the handle substrate such that the thermally opaque material is between the epitaxial formation structure and the handle substrate. In various embodiments, the thermally opaque material at least partially blocks radiative heat transmission between the handle substrate and the epitaxial formation structure, for example, to provide increased accuracy of epitaxy process temperature measurements and/or increased uniformity of epitaxy growth characteristics across the engineered substrate.Type: ApplicationFiled: October 1, 2013Publication date: April 2, 2015Applicant: MICRON TECHNOLOGY, INC.Inventors: Joseph G. Coones, Jeremy S. Frei
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Publication number: 20150048301Abstract: Engineered substrates having mechanically weak structures for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming an intermediary material at an upper surface of a structural material and forming a plurality of pores in the intermediary material. The porous intermediary material and the structural material can define a handle substrate. The method can further include bonding an epitaxial formation structure on the handle substrate such that the porous intermediary material is between the epitaxial formation structure and the structural material. In various embodiments, the porous intermediary material is configured to break under mechanical stress.Type: ApplicationFiled: August 19, 2013Publication date: February 19, 2015Applicant: MICRON TECHNOLOGY, INC.Inventors: Oliver J. Kilbury, Martin F. Schubert, Jeremy S. Frei
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Patent number: 8952413Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.Type: GrantFiled: March 8, 2012Date of Patent: February 10, 2015Assignee: Micron Technology, Inc.Inventors: Vladimir Odnoblyudov, Scott D. Schellhammer, Jeremy S. Frei
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Publication number: 20140295594Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: ApplicationFiled: June 16, 2014Publication date: October 2, 2014Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei
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Patent number: 8754424Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.Type: GrantFiled: August 29, 2011Date of Patent: June 17, 2014Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Vladimir Odnoblyudov, Jeremy S. Frei