Abstract: An inverting circuit comprises a first inverter in a main path having a first input and a common ouput. A second inverter receives the first input and is coupled with a first voltage controlled pass gate to the common output. A third inverter couples a second input to the common output using a second voltage controlled pass gate. A fourth inverter couples the second input to the common output using the first voltage controlled pass gate. A ring oscillator is formed using a number N of the inverting circuits with each common output coupled to the first inputs forming a main ring of a ring oscillator. The second inputs are coupled to feed-forward signals from selected outputs. The resulting signals at the common outputs are an interpolation of the first and second input signals modulated by a control voltage coupled to the first and second pass gates.

Abstract: A method and apparatus for determining jitter and pulse width from clock signal comparisons provides a low cost and production-integrable mechanism for measuring a clock signal with a reference clock, both of unknown frequency. The measured clock signal is sampled at transitions of a reference clock and the sampled values are collected in a histogram according to a folding of the samples around a timebase which is either swept to detect a minimum jitter for the folded data or is obtained from direct frequency analysis for the sample set. The histogram for the correct estimated period is statistically analyzed to yield the pulse width, which is the difference between the peaks of the probability density function and jitter, which corresponds to width of the density function peaks. Frequency drift is corrected by adjusting the timebase used to fold the data across the sample set.

Abstract: For integrated circuits including circuit packaging and circuit communication technologies provision is made for a method of interconnecting or mapping a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array. Also provided is an arrangement for the interconnecting or mapping of a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array.

Abstract: An inverting circuit comprises a first inverter in a main path having a first input and a common ouput. A second inverter receives the first input and is coupled with a first voltage controlled pass gate to the common output. A third inverter couples a second input to the common output using a second voltage controlled pass gate. A fourth inverter couples the second input to the common output using the first voltage controlled pass gate. A ring oscillator is formed using a number N of the inverting circuits with each common output coupled to the first inputs forming a main ring of a ring oscillator. The second inputs are coupled to feed-forward signals from selected outputs. The resulting signals at the common outputs are an interpolation of the first and second input signals modulated by a control voltage coupled to the first and second pass gates.

Abstract: Techniques for measuring optical modulation amplitude (OMA) are disclosed. For example, a technique for measuring an OMA value associated with an input signal includes the following steps/operations. The input signal is applied to a photodetector, wherein the photodetector is calibrated to have a given responsivity value R, and further wherein the photodetector generates an output signal in response to the input signal. The output signal from the photodetector is applied to a radio frequency (RF) power meter, wherein the RF power meter measures the root mean squared (RMS) power value of the output signal received from the photodetector. The OMA value associated with the input signal is determined in response to the root mean squared (RMS) power value measured by the RF power meter. The OMA value may be determined as a function of a factor F derived from a relationship between an amplitude of a data signal and the RMS value of the data signal.

Abstract: A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.

Abstract: The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer.

Abstract: Testing is performed on an amplifier wafer housing a transimpedance amplifier prior to packaging the transimpedance amplifier with an external photodetector, wherein the transimpedance amplifier includes a small, auxiliary, integrated silicon photodetector provided at the input of the transimpedance, in parallel with external photodetector attachment points. The small auxiliary photodetector does not significantly affect the high speed performance of the transimpedance amplifier. The small auxiliary photodetector is provided to facilitate wafer-level testing at the transimpedance amplifier input. To test the transimpedance amplifier, the transimpedance amplifier is stimulated by optically exciting the small auxiliary photodetector, wherein the small auxiliary photodetector is excited using short wavelength light, whereby advantages such as higher efficiency may be obtained.