Patents by Inventor Jeremy T. ANDERSON
Jeremy T. ANDERSON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094632Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Kai Jiang, Stephen T. Meyers, Lauren B. McQuade, Jeremy T. Anderson, Brian J. Cardineau, Benjamin L. Clark, Dominick Smiddy, Margaret Wilson-Moses
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Patent number: 11897906Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: GrantFiled: March 11, 2021Date of Patent: February 13, 2024Assignee: Inpria CorporationInventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
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Patent number: 11868046Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.Type: GrantFiled: March 8, 2022Date of Patent: January 9, 2024Assignee: Inpria CorporationInventors: Kai Jiang, Stephen T. Meyers, Lauren B. McQuade, Jeremy T. Anderson, Brian J. Cardineau, Benjamin L Clark, Dominick Smiddy, Margaret Wilson-Moses
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Patent number: 11809081Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: June 6, 2022Date of Patent: November 7, 2023Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 11754924Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: July 6, 2022Date of Patent: September 12, 2023Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20230004081Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: September 6, 2022Publication date: January 5, 2023Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Publication number: 20230004090Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20230004083Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: September 6, 2022Publication date: January 5, 2023Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Publication number: 20230004082Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: September 6, 2022Publication date: January 5, 2023Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Patent number: 11537048Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: August 6, 2020Date of Patent: December 27, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220365429Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: June 2, 2022Publication date: November 17, 2022Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Patent number: 11500284Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: GrantFiled: October 30, 2020Date of Patent: November 15, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Publication number: 20220334488Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220334487Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220324886Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.Type: ApplicationFiled: June 15, 2022Publication date: October 13, 2022Inventors: Brian J. Cardineau, William Earley, Stephen T. Meyers, Kai Jiang, Jeremy T. Anderson
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Publication number: 20220299878Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220291582Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: ApplicationFiled: March 28, 2022Publication date: September 15, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Patent number: 11392029Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: GrantFiled: November 5, 2019Date of Patent: July 19, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Patent number: 11392028Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.Type: GrantFiled: April 4, 2019Date of Patent: July 19, 2022Assignee: Inpria CorporationInventors: Brian J. Cardineau, William Earley, Stephen T. Meyers, Kai Jiang, Jeremy T. Anderson
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Publication number: 20220187705Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.Type: ApplicationFiled: March 8, 2022Publication date: June 16, 2022Inventors: Kai Jiang, Stephen T. Meyers, Lauren B. McQuade, Jeremy T. Anderson, Brian J. Cardineau, Benjamin L. Clark, Dominick Smiddy, Margaret Wilson-Moses