Patents by Inventor Jeremy T. Robinson

Jeremy T. Robinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crystallographically-oriented Metallic Films with Two-dimensional Crystal Layers
    Publication number: 20230307232
    Abstract: A crystallographically-oriented metallic film with a two-dimensional crystal layer comprising a substrate, a metal film on the substrate, the two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the two-dimensional crystal layer on the metal film on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.
    Type: Application
    Filed: May 17, 2023
    Publication date: September 28, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jeremy T. Robinson, Jose J. Fonseca Vega, Maxim K. Zalalutdinov
  • MicroDial -- Miniaturized apparatus for solar time keeping
    Publication number: 20230266715
    Abstract: A miniaturized apparatus for tracking the apparent motion of the sun comprising a light mask, a pixilated image sensor, and an image processing unit, wherein sunlight transmitted through the light mask allows the miniaturized apparatus to make time, latitude, direction, and date measurements. A method of making a miniaturized apparatus for tracking the apparent motion of the sun comprising the steps of providing a light mask, providing a pixilated image sensor, providing an image processing unit, and resulting in a miniaturized apparatus for tracking the apparent motion of the sun.
    Type: Application
    Filed: February 22, 2023
    Publication date: August 24, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jeremy T. Robinson, Woodruff T. Sullivan
  • Method and use for low-temperature epitaxy and film texturing between a two-dimensional crystalline layer and metal film
    Patent number: 11694895
    Abstract: A method of making a crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising the steps of providing a metal film on a substrate, transferring a two-dimensional crystal layer onto the metal film and forming a two-dimensional crystal layer on metal film complex, heating the two-dimensional crystal layer on metal film complex, and forming a crystallographically-oriented metallic film with a two-dimensional crystal layer. A crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising a substrate, a metal film on the substrate, a two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the porous metal/two-dimensional crystal layer on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: July 4, 2023
    Assignee: The Government of the United States of America, as represented by the Secretarv of the Navy
    Inventors: Jeremy T. Robinson, Jose J. Fonseca Vega, Maxim K. Zalalutdinov
  • Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators
    Patent number: 11280856
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: March 22, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Direct Electrical Detection of Current-Induced Spin Polarization Due to Spin-Momentum Locking in Topological Insulators
    Publication number: 20210109171
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 15, 2021
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators
    Patent number: 10852370
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: December 1, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Crystallographically-oriented Metallic Films with Two-dimensional Crystal Layers
    Publication number: 20200266061
    Abstract: A method of making a crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising the steps of providing a metal film on a substrate, transferring a two-dimensional crystal layer onto the metal film and forming a two-dimensional crystal layer on metal film complex, heating the two-dimensional crystal layer on metal film complex, and forming a crystallographically-oriented metallic film with a two-dimensional crystal layer. A crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising a substrate, a metal film on the substrate, a two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the porous metal/two-dimensional crystal layer on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.
    Type: Application
    Filed: January 28, 2020
    Publication date: August 20, 2020
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jeremy T. Robinson, Jose J. Fonseca Vega, Maxim K. Zalalutdinov, III
  • Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
    Patent number: 10236365
    Abstract: A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: March 19, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. J. van 't Erve, Jeremy T. Robinson, Berend T. Jonker, Keith E. Whitener
  • Direct Electrical Detection of Current-Induced Spin Polarization Due to Spin-Momentum Locking in Topological Insulators
    Publication number: 20190056462
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Application
    Filed: October 23, 2018
    Publication date: February 21, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators
    Patent number: 10132880
    Abstract: A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of Bi2Se3 and applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: November 20, 2018
    Assignee: The United States of America, as represented by the Secratary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
    Patent number: 10128357
    Abstract: A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: November 13, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. J. van't Erve, Jeremy T. Robinson, Berend T. Jonker, Keith E. Whitener
  • HOMOEPITAXIAL TUNNEL BARRIERS WITH HYDROGENATED GRAPHENE-ON-GRAPHENE FOR ROOM TEMPERATURE ELECTRONIC DEVICE APPLICATIONS
    Publication number: 20180182852
    Abstract: A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
    Type: Application
    Filed: January 30, 2018
    Publication date: June 28, 2018
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. J. van 't Erve, Jeremy T. Robinson, Berend T. Jonker, Keith E. Whitener
  • PROCESS FOR FORMING HOMOEPITAXIAL TUNNEL BARRIERS WITH HYDROGENATED GRAPHENE-ON-GRAPHENE FOR ROOM TEMPERATURE ELECTRONIC DEVICE APPLICATIONS
    Publication number: 20180130897
    Abstract: A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
    Type: Application
    Filed: February 7, 2017
    Publication date: May 10, 2018
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. J. van 't Erve, Jeremy T. Robinson, Berend T. Jonker, Keith E. Whitener
  • Graphene surface functionality transfer
    Patent number: 9895870
    Abstract: A method of transferring functionalized graphene comprising the steps of providing graphene on a first substrate, functionalizing the graphene and forming functionalized graphene on the first substrate, delaminating the functionalized graphene from the first substrate, and applying the functionalized graphene to a second substrate.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: February 20, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Keith E. Whitener, Woo K. Lee, Jeremy T. Robinson, Nabil D. Bassim, Rhonda Michele Stroud, Paul E. Sheehan
  • Graphene Surface Functionality Transfer
    Publication number: 20170259554
    Abstract: A method of transferring functionalized graphene comprising the steps of providing graphene on a first substrate, functionalizing the graphene and forming functionalized graphene on the first substrate, delaminating the functionalized graphene from the first substrate, and applying the functionalized graphene to a second substrate.
    Type: Application
    Filed: February 22, 2017
    Publication date: September 14, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Keith E. Whitener, Woo K. Lee, Jeremy T. Robinson, Nabil D. Bassim, Rhonda Michele Stroud, Paul E. Sheehan
  • Homoepitaxial Tunnel Barriers with Functionalized Graphene-on-Graphene and Methods of Making
    Publication number: 20170194468
    Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
    Type: Application
    Filed: March 20, 2017
    Publication date: July 6, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. T. van 't Erve, Connie H. Li, Jeremy T. Robinson, Berend T. Jonker
  • Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
    Patent number: 9698254
    Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: July 4, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. T. van 't Erve, Connie H. Li, Jeremy T. Robinson, Berend T. Jonker
  • Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
    Patent number: 9614063
    Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: April 4, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. T. van 't Erve, Connie H. Li, Jeremy T. Robinson, Berend T. Jonker
  • Direct Electrical Detection of Current-Induced Spin Polarization Due to Spin-Momentum Locking in Topological Insulators
    Publication number: 20160169986
    Abstract: A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of Bi2Se3 and applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Application
    Filed: November 6, 2015
    Publication date: June 16, 2016
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. T. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Homoepitaxial Tunnel Barriers with Functionalized Graphene-on-Graphene and Methods of Making
    Publication number: 20150303059
    Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
    Type: Application
    Filed: February 24, 2015
    Publication date: October 22, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. T. van 't Erve, Connie H. Li, Jeremy T. Robinson, Berend T. Jonker