Abstract: The present disclosure relates generally to a process for producing polymer fibers, typically polyacrylonitrile-based fibers, the properties of which are controlled by certain parameters of the process, such as the amount of jet stretch, the amount of wet stretch, and the amount of hot stretch employed. The present disclosure also relates to a process for producing carbon fiber from such polymer fibers.

Abstract: A search apparatus (1) coupled to a database, the apparatus (1) comprising: a processor configured to execute instructions; a memory storing instructions which, when executed by the processor, cause the processor to: search the database for items containing a search term, wherein items containing the search term are matched items; identify fields corresponding to attributes of the matched items; define a range of values for each field; divide the range of values for each field into a plurality of ranged field buckets; distribute the matched items between the ranged field buckets based on attributes of the matched items that are within the range of values for each ranged field bucket; calculate an effectiveness value for each field based on the number of matched items in each of the ranged field buckets; select one or more top fields, each top field having an effectiveness value that is greater than a predetermined effectiveness value; and provide an effectiveness indicator output which is indicative of the ef

Abstract: A data management system (1) for managing a data store (6), the system comprising: a central control module (2) configured to receive a request and generate a task using the request; a state store module (26) coupled to the central control module (2) and configured to store the task generated by the central control module (2), wherein the state store module (26) is further configured to store state information indicative of a state of the data store (6) and configured to output the stored task in response to the state information; and an enactor module (31) which is configured to action the task output from the state store module (26) by generating an enactor output command that at least partly corresponds to the task which, when communicated to the data store (6), causes the data store (6) to perform an action related to data stored in the data store (6).

Abstract: A data management system coupled to a filesystem (16) and at least one data storage target (17), the system comprising: a processor configured to execute instructions; a memory storing instructions which, when executed by the processor, cause the processor to: receive a plurality of operation instructions from the filesystem (16); generate a plurality of light weight events, each light weight event corresponding to an operation instruction of the plurality of operation instructions; process each light weight event by enacting the operation instruction which corresponds to the light weight event to perform an operation on data stored by the at least one data storage target (17); and provide at least one response notification to the filesystem (16), the at least one response notification indicating a processing status for one or more of the light weight events such that the data management system can monitor each operation as it is performed on data stored by the at least one data storage target (17).

Abstract: A data management system coupled to a filesystem (16) and at least one data storage target (17), the system comprising: a processor configured to execute instructions; a memory storing instructions which, when executed by the processor, cause the processor to: receive a plurality of operation instructions from the filesystem (16); generate a plurality of light weight events, each light weight event corresponding to an operation instruction of the plurality of operation instructions; process each light weight event by enacting the operation instruction which corresponds to the light weight event to perform an operation on data stored by the at least one data storage target (17); and provide at least one response notification to the filesystem (16), the at least one response notification indicating a processing status for one or more of the light weight events such that the data management system can monitor each operation as it is performed on data stored by the at least one data storage target (17).

Abstract: A data management system (1) for managing a data store (6), the system comprising: a central control module (2) configured to receive a request and generate a task using the request; a state store module (26) coupled to the central control module (2) and configured to store the task generated by the central control module (2), wherein the state store module (26) is further configured to store state information indicative of a state of the data store (6) and configured to output the stored task in response to the state information; and an enactor module (31) which is configured to action the task output from the state store module (26) by generating an enactor output command that at least partly corresponds to the task which, when communicated to the data store(6), causes the data store (6) to perform an action related todata stored in the data store(6).

Abstract: A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein the showerhead module includes a faceplate wherein a lower surface of the faceplate forms an upper wall of a cavity defining the isothermal processing zone, a backing plate, and an isolation ring which surrounds the faceplate and the backing plate. At least one compression seal is compressed between the faceplate and the backing plate which forms a central gas plenum between the faceplate and the backing plate. A substrate pedestal module is configured to heat and support a semiconductor substrate wherein an upper surface of the pedestal module forms a lower wall of the cavity defining the isothermal processing zone within the chemical isolation chamber.

Abstract: A search apparatus (1) coupled to a database, the apparatus (1) comprising: a processor configured to execute instructions; a memory storing instructions which, when executed by the processor, cause the processor to: search the database for items containing a search term, wherein items containing the search term are matched items; identify fields corresponding to attributes of the matched items; define a range of values for each field; divide the range of values for each field into a plurality of ranged field buckets; distribute the matched items between the ranged field buckets based on attributes of the matched items that are within the range of values for each ranged field bucket; calculate an effectiveness value for each field based on the number of matched items in each of the ranged field buckets; select one or more top fields, each top field having an effectiveness value that is greater than a predetermined effectiveness value; and provide an effectiveness indicator output which is indicative of the ef

Abstract: A chemical deposition apparatus having a chemical deposition chamber formed within the chemical isolation chamber includes a gas seal. The chemical deposition chamber includes a showerhead module having a faceplate with gas inlets to deliver reactor chemistries to a wafer cavity for processing a semiconductor substrate. The showerhead module includes primary exhaust gas outlets to remove reaction gas chemistries and inert gases from the wafer cavity. An inert gas feed delivers seal gas which flows radially inwardly at least partly through a gap between a step of the showerhead module and the pedestal module to form a gas seal. Secondary exhaust gas outlets withdraw at least some of the inert gas flowing through the gap to provide a high Peclet number.

Abstract: A faceplate for a gas distribution system of a plasma processing chamber includes a faceplate body having a first surface, a second surface opposite to the first surface and a side surface. A first plurality of holes in the faceplate body extends from the first surface to the second surface. At least some of the first plurality of holes has a first size dimension and a second size dimension in a plane parallel to the first surface. The first size dimension is transverse to the second size dimension. The first size dimension is less than 3 plasma sheath thicknesses of plasma generated by the plasma processing chamber. The second size dimension is greater than 2 times the first size dimension.

Abstract: In a unit gravity environment, a glass preform is encased in a material to generate an encased glass preform. The material remains solid at the glass preform's crystal melting temperature and is inert with respect to the glass preform. The encased glass preform is placed in a microgravity environment and heated to a temperature above the crystal melting temperature until the glass preform melts and is free of crystals, wherein a crystallite-free glass preform is encased within the material. The crystallite-free glass preform is then cooled in the microgravity environment to generate a solid crystallite-free glass preform encased within the material. While still in the microgravity environment, the material encasing the solid crystallite-free glass preform is removed in the microgravity environment and the solid crystallite-free glass preform is polished. A glass optical fiber is then drawn from the solid crystallite-free glass preform in the microgravity environment.

Abstract: A gas distribution plate for a substrate processing system includes a ceramic lower portion of the gas distribution plate including a plurality of ceramic green sheets. A ceramic upper portion of the gas distribution plate includes a plurality of ceramic green sheets. An electrode is printed on at least one of an upper surface of the ceramic lower portion and a lower surface of the ceramic upper portion using metal screen printing. A first plurality of through holes is machined through the ceramic lower portion and the ceramic upper portion of the gas distribution plate prior to sintering.

Abstract: A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum.

Abstract: A faceplate for a gas distribution system of a plasma processing chamber includes a faceplate body having a first surface, a second surface opposite to the first surface and a side surface. A first plurality of holes in the faceplate body extends from the first surface to the second surface. At least some of the first plurality of holes has a first size dimension and a second size dimension in a plane parallel to the first surface. The first size dimension is transverse to the second size dimension. The first size dimension is less than 3 plasma sheath thicknesses of plasma generated by the plasma processing chamber. The second size dimension is greater than 2 times the first size dimension.

Abstract: A faceplate for a gas distribution system of a plasma processing chamber includes a faceplate body having a first surface, a second surface opposite to the first surface and a side surface. A first plurality of holes in the faceplate body extends from the first surface to the second surface. At least some of the first plurality of holes has a first size dimension and a second size dimension in a plane parallel to the first surface. The first size dimension is transverse to the second size dimension. The first size dimension is less than 3 plasma sheath thicknesses of plasma generated by the plasma processing chamber. The second size dimension is greater than 2 times the first size dimension.

Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.

Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.

Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.

Abstract: A chemical deposition apparatus having a chemical deposition chamber formed within the chemical isolation chamber includes a gas seal. The chemical deposition chamber includes a showerhead module having a faceplate with gas inlets to deliver reactor chemistries to a wafer cavity for processing a semiconductor substrate. The showerhead module includes primary exhaust gas outlets to remove reaction gas chemistries and inert gases from the wafer cavity. An inert gas feed delivers seal gas which flows radially inwardly at least partly through a gap between a step of the showerhead module and the pedestal module to form a gas seal. Secondary exhaust gas outlets withdraw at least some of the inert gas flowing through the gap to provide a high Peclet number.

Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.