Abstract: Various embodiments of a composite material are provided. In one embodiment of the present invention a nanometer-scale composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The composite material exhibits memristive properties when a voltage differential is applied to the nanocomposite. In another embodiment, a variable resistor device includes a first electrode terminal and a second electrode terminal and a nanocomposite in electrical communication with the electrode terminals. The composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The memristor is tunable as the minimum instantaneous resistance can be altered several orders of magnitude by varying the composition and ratio of the variable-conductivity material and conductive material constituents of the composites.

Abstract: Various embodiments of a composite material are provided. In one embodiment of the present invention a nanometer-scale composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The composite material exhibits memristive properties when a voltage differential is applied to the nanocomposite. In another embodiment, a variable resistor device includes a first electrode terminal and a second electrode terminal and a nanocomposite in electrical communication with the electrode terminals. The composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The memristor is tunable as the minimum instantaneous resistance can be altered several orders of magnitude by varying the composition and ratio of the variable-conductivity material and conductive material constituents of the composites.