Abstract: A voltage regulator can provide a regulated output voltage. The voltage regulator includes a regulating module that includes a resistor and a field effect transistor that has a threshold voltage. The resistor is coupled to a gate terminal and a source terminal of the field effect transistor. The regulating module provides the output voltage. A reference module is suitable for detecting a variation of the output voltage. The reference module is coupled with the regulating module. A current sink is suitable for subtracting a compensation current from the current flowing from the regulating module to the reference module. The compensation current is dependent on a variation of the threshold voltage.

Abstract: Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector (C) or an emitter (E) of the heterojunction bipolar transistor.

Abstract: A voltage regulator can provide a regulated output voltage. The voltage regulator includes a regulating module that includes a resistor and a field effect transistor that has a threshold voltage. The resistor is coupled to a gate terminal and a source terminal of the field effect transistor. The regulating module provides the output voltage. A reference module is suitable for detecting a variation of the output voltage. The reference module is coupled with the regulating module. A current sink is suitable for subtracting a compensation current from the current flowing from the regulating module to the reference module. The compensation current is dependent on a variation of the threshold voltage.

Abstract: Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector (C) or an emitter (E) of the heterojunction bipolar transistor.

Abstract: Bandgap reference circuit, comprising a voltage generator (VG) designed to produce a voltage or a current proportional to absolute temperature, a supply circuit (SC), designed to produce a supply for operating the voltage generator (VG), comprising a bias element (BS) and a control element (CS), and a bias circuit (BC), designed to produce a bias for operating the voltage generator (VG), comprising a bias element (BB) and a control element (CB). At least one of the control element (CS) of the supply circuit (SC) and the control element (CB) of the bias circuit (BC) comprises a pseudomorphic high-electron-mobility transistor or a hetero-junction bipolar transistor and/or at least one of the bias element (BS) of the supply circuit (SC) and the bias element (BB) of the bias circuit (BC) comprises a long-gate pseudomorphic high-electron-mobility transistor or a resistor.

Abstract: Bandgap reference circuit, comprising a voltage generator (VG) designed to produce a voltage or a current proportional to absolute temperature, a supply circuit (SC), designed to produce a supply for operating the voltage generator (VG), comprising a bias element (BS) and a control element (CS), and a bias circuit (BC), designed to produce a bias for operating the voltage generator (VG), comprising a bias element (BB) and a control element (CB). At least one of the control element (CS) of the supply circuit (SC) and the control element (CB) of the bias circuit (BC) comprises a pseudomorphic high-electron-mobility transistor or a hetero-junction bipolar transistor and/or at least one of the bias element (BS) of the supply circuit (SC) and the bias element (BB) of the bias circuit (BC) comprises a long-gate pseudomorphic high-electron-mobility transistor or a resistor.