Abstract: A method for forming an electrically conductive via in a substrate that includes the steps of: forming a through hole in a first substrate; bringing a first surface of a second substrate into contact with the first surface of the first substrate, such that the through hole in the first substrate is covered by the first surface of the second substrate; filling the through hole in the first substrate with an electrically conductive material by electroplating to form the electrically conductive via, and removing the second substrate, wherein the first surface of the first and the second substrate each have a surface roughness Ra of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and the first surface of the first and the second substrate are brought in direct contact with each other, such that a direct bond is formed there between.

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract: The invention relates to a method for forming an electrically conductive via in a substrate and such a substrate comprising an electrically conductive, said method comprising the steps, to be performed in suitable sequence, of: a) providing a first substrate as said substrate; b) forming a through hole in said first substrate; c) providing a second substrate; d) bringing a first surface of said second substrate into contact with said first surface of said first substrate, such that said through hole in said first substrate is covered by said first surface of said second substrate; e) filling said through hole in said first substrate with an electrically conductive material by means of electroplating for forming said electrically conductive via, and f) removing said second substrate, wherein said first surface of said first substrate and said first surface of said second substrate each have a surface roughness R a of less than 2 nm, preferably less than 1 nm, more preferably less than 0.

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract: The invention relates to a flow meter for determining a flow of a medium. The flow meter comprises a flow tube for transporting the medium whose flow is to be measured. The flow tube has a supply end and a discharge end disposed downstream thereof. The flow meter is provided with a first flow sensor for measuring the flow of the medium at a first position of the flow tube. The flow meter is provided with a second flow sensor for measuring the flow of the medium at a second position of the flow tube.

Abstract: The invention relates to a flow meter for determining a flow of a medium. The flow meter comprises a flow tube for transporting the medium whose flow is to be measured. The flow tube has a supply end and a discharge end disposed downstream thereof. The flow meter is provided with a first flow sensor for measuring the flow of the medium at a first position of the flow tube. The flow meter is provided with a second flow sensor for measuring the flow of the medium at a second position of the flow tube.

Abstract: A flowmeter including a system chip with a silicon substrate provided on a carrier, in an opening whereof at least one silicon flow tube is provided for transporting a medium whose flow rate is to be measured, the tube having two ends that issue via a wall of the opening into channels coated with silicon nitride in the silicon substrate, wherein the flow tube forms part of a Coriolis flow sensor and/or a thermal flow sensor, and wherein the channels are preferably in communication through the carrier with connection lines to the external world.

Abstract: A flowmeter including a system chip with a silicon substrate provided on a carrier, in an opening whereof at least one silicon flow tube is provided for transporting a medium whose flow rate is to be measured, the tube having two ends that issue via a wall of the opening into channels coated with silicon nitride in the silicon substrate, wherein the flow tube forms part of a Coriolis flow sensor and/or a thermal flow sensor, and wherein the channels are preferably in communication through the carrier with connection lines to the external world.