Abstract: This invention provides a diffusion resistor structure including a resistor-shaped diffusion having electrically integrated at opposite ends a first silicided contact area and a second silicided contact area. Polysilicon and oxide layers, or only an oxide layer, reside above a body region of the diffusion. The method provides for formation of the diffusion resistor with silicided contacts by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent dopant out diffusion step is performed. Selective etching is then utilized to remove the undoped polysilicon layer, leaving a polysilicon cap over the body region of the diffusion. A second region of the diffusion comprises the first contact area and second contact area, which are silicided once the body region is protected.

Abstract: An improved field effect transistor (FET) structure is disclosed. It comprises a first insulator layer containing at least one primary level stud extending through the layer; an undoped cap oxide layer disposed over the insulator layer and abutting the upper region of each stud; a primary level thin film transistor (TFT) disposed over the undoped cap oxide layer; and a planarized oxide layer disposed over the TFT. Multiple TFT's can be stacked vertically, and connected to other levels of studs and metal interconnection layers. Another embodiment of the invention includes the use of a protective interfacial cap over the surface of tungsten-type studs. The FET structure can serve as a component of a static random access memory (SRAM) cell. Related processes are also disclosed.