Abstract: Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity.

Abstract: The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.

Abstract: The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.