Patents by Inventor Jerome Dechamp

Jerome Dechamp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8142593
    Abstract: A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area.
    Type: Grant
    Filed: August 11, 2006
    Date of Patent: March 27, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Chrystel Deguet, Laurent Clavelier, Jerome Dechamp
  • Patent number: 7541263
    Abstract: The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including: a) a step for forming a first layer (24) in a first insulating material on said surface, b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p, c) a step for planarization of the assembly.
    Type: Grant
    Filed: October 6, 2005
    Date of Patent: June 2, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Hubert Moriceau, Christophe Morales, Marc Zussy, Jerome Dechamp
  • Publication number: 20090120568
    Abstract: A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area.
    Type: Application
    Filed: August 11, 2006
    Publication date: May 14, 2009
    Inventors: Chrystel Deguet, Laurent Clavelier, Jerome Dechamp
  • Publication number: 20070259528
    Abstract: The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including: a) a step for forming a first layer (24) in a first insulating material on said surface, b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p, c) a step for planarization of the assembly.
    Type: Application
    Filed: October 6, 2005
    Publication date: November 8, 2007
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Hubert Moriceau, Christophe Morales, Marc Zussy, Jerome Dechamp