Patents by Inventor Jerome E. Beckmann

Jerome E. Beckmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5635966
    Abstract: This invention provides an apparatus and method of fabrication thereof for an inkjet printhead with an improved ink flow path between an ink reservoir and vaporization chambers in an inkjet printhead. In the preferred embodiment, a barrier layer containing ink channels and vaporization chambers is located between a rectangular substrate and a nozzle member containing an array of orifices. The substrate contains two linear arrays of heater elements, and each orifice in the nozzle member is associated with a vaporization chamber and heater element. The ink channels in the barrier layer have ink entrances generally running along two opposite edges of the substrate so that ink flowing around the edges of the substrate gain access to the ink channels and to the vaporization chambers. The apparatus is fabricated without using ion implant technology.
    Type: Grant
    Filed: April 29, 1994
    Date of Patent: June 3, 1997
    Assignee: Hewlett-Packard Company
    Inventors: Brian J. Keefe, Steven W. Steinfield, Winthrop D. Childers, Paul H. McClelland, Kenneth E. Trueba, Duane A. Fasen, Jerome E. Beckmann, John H. Stanback, Ulrich E. Hess, James R. Hulings, Larry S. Metz, Charles E. Moore, Eldukar V. Bhaskar
  • Patent number: 5159353
    Abstract: An improved thermal inkjet printhead having MOSFET drive transistors incorporated therein. The gate of each MOSFET transistor is formed by applying a layer of silicon dioxide onto a silicon substrate, applying a layer of silicon nitride onto the silicon dioxide, and applying a layer of polycrystalline silicon onto the silicon nitride. Portions of the substrate surrounding the gate are oxidized, forming field oxide regions. Drain and source regions are then conventionally formed, followed by the application of a protective dielectric layer onto the field oxide, drain, source, and gate. A resistive layer is deposited on the dielectric layer and directly connected to the source, drain, and gate. A conductive layer is deposited on a portion of the resistive layer, ultimately forming both covered and uncovered regions thereof. The uncovered region functions as a heating resistor, and the covered regions function as electrical contacts to the transistor and resistor.
    Type: Grant
    Filed: July 2, 1991
    Date of Patent: October 27, 1992
    Assignee: Hewlett-Packard Company
    Inventors: Duane A. Fasen, Jerome E. Beckmann, John H. Stanback, Ulrich E. Hess, James R. Hulings, Larry S. Metz, Charles E. Moore
  • Patent number: 5050838
    Abstract: A valve apparatus for controlling fluid flow comprising a substrate having a first aperture extending therethrough for defining a first fluid flow path; a beam having first and second terminal end portions mounted in fixed relationship with the substrate and having a bucklingly displaceable intermediate portion positioned in overlying relationship with the aperture for covering and uncovering the aperture for preventing or enabling fluid flow through the aperture; and a temperature control assembly for selectively controlling the temperature of the beam for selectively bucklingly displacing the intermediate portion of the beam for controlling fluid flow through the aperture.
    Type: Grant
    Filed: July 31, 1990
    Date of Patent: September 24, 1991
    Assignee: Hewlett-Packard Company
    Inventors: Christopher C. Beatty, Jerome E. Beckmann