Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

Abstract: A device and a method for creating a spatial dose distribution in a medium volume (22) are described. A laser system produces laser pulses (12) with a pulse length shorter than 200 fs (femtoseconds) and is capable to be focused to peak intensities greater than 10?18 W/cm?2 (watts per centimeter squared). An electron source (18) is capable of releasing a high-energy electron pulse (20), in particular the electrons having an energy greater than 100 MeV, upon irradiation with said laser pulses (12) propagating into the medium volume (22). The light paths (52, 56,58) of at least some of the laser pulses (12) are adjustable in such a way that high-energy electron pulses (20) are emitted from the irradiated at least one electron source on different trajectories (20,28,60,62) through the medium volume (22) thereby depositing their dose in the medium volume (22) according to a provided pattern.