Abstract: A method for forming a film comprising hafnium, zirconium, and oxygen, the method comprising forming the film by a cyclical vapor deposition process under the effect of an electric field.

Abstract: Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.

Abstract: Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (??) of greater than 2×106 cm2/mol.