Patents by Inventor Jerome K. Wade

Jerome K. Wade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition
    Patent number: 8837547
    Abstract: A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: September 16, 2014
    Assignee: Finisar Corporation
    Inventors: Ralph H. Johnson, Jerome K. Wade
  • LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION
    Publication number: 20120236892
    Abstract: A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.
    Type: Application
    Filed: March 19, 2012
    Publication date: September 20, 2012
    Applicant: FINISAR CORPORATION
    Inventors: Ralph H. Johnson, Jerome K. Wade
  • LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS
    Publication number: 20120236891
    Abstract: A VCSEL can include: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bounding the one or more quantum well layers; and one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, wherein the quantum wells, barriers and transitional monolayers are substantially devoid of traps. The one or more transitional monolayers include GaP, GaAs, and/or GaAsP. Alternatively, the VCSEL can include two or more transitional monolayers of AlInGaAs with a barrier-side monolayer having lower In and higher Al compared to a quantum well side monolayer that has higher In and lower Al.
    Type: Application
    Filed: March 19, 2012
    Publication date: September 20, 2012
    Applicant: FINISAR CORPORATION
    Inventors: Ralph H. Johnson, Jimmy Alan Tatum, Andrew N. MacInnes, Jerome K. Wade, Luke A. Graham