Abstract: The invention relates to a process for fabricating an optoelectronic device (1) comprising a plurality of diodes (40), comprising the following steps: providing a readout substrate (10) containing a readout circuit (12) and having a growth face defined by a plurality of conductive segments (20) that are separate from one another and connected to the readout circuit (12); producing, on the growth face, a plurality of nucleation segments (30) made of a two-dimensional crystalline material, which segments are separate from one another, said segments resting in contact with the conductive segments (20); producing, by epitaxy from the nucleation segments (30), the plurality of diodes.

Abstract: The invention relates to a monofrequency optical filter, including reflective elements which are formed on one surface of a dielectric support layer and which define at least one periodic array of parallel grooves passing across same. The periodicity, height, and width of said periodic groove array are selected so as to form a structure, the wavelength of which can be selected from within a predetermined range of wavelengths. According to the invention, the thickness and refractive index of the support layer are selected so that said layer forms a half-wave plate for a wavelength of the predetermined wavelength range. The filter, when in contact with the surface of the support layer opposite the surface on which the groove array is formed, includes a medium, the refractive index of which is less than that of the support layer so as to obtain a guided mode that resonates in the support layer.

Abstract: The invention relates to a monofrequency optical filter, including reflective elements which are formed on one surface of a dielectric support layer and which define at least one periodic array of parallel grooves passing across same. The periodicity, height, and width of said periodic groove array are selected so as to form a structure, the wavelength of which can be selected from within a predetermined range of wavelengths. According to the invention, the thickness and refractive index of the support layer are selected so that said layer forms a half-wave plate for a wavelength of the predetermined wavelength range. The filter, when in contact with the surface of the support layer opposite the surface on which the groove array is formed, includes a medium, the refractive index of which is less than that of the support layer so as to obtain a guided mode that resonates in the support layer.

Abstract: The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.