Patents by Inventor Jerome Lolivier

Jerome Lolivier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170298
    Abstract: A method to produce an integrated circuit including depositing a first layer of a metallic chemical constituent on a silicon substrate. A protective layer including a main chemical constituent different from the main chemical constituent of the first layer is then deposited on this first layer. An additional layer is deposited on the protective layer and includes a main chemical constituent different from, equivalent to or of equivalent size to the main chemical constituent of the first layer. A heat treatment operation is carried out at a first temperature to generate a silicide including the main constituent of the first layer and silicon according to a first stoichiometry. In a subsequent step, the additional layer and the protective layer are removed. In another step, a further heat treatment operation is carried out at a temperature greater than the first temperature in order to change the stoichiometry of the previously created silicide.
    Type: Application
    Filed: October 27, 2023
    Publication date: May 23, 2024
    Applicant: EM Microelectronic-Marin SA
    Inventors: Jean-Philippe JACQUEMIN, Jérôme LOLIVIER, René MEYER
  • Patent number: 7968945
    Abstract: An improved microelectronic device, and method for making such a microelectronic device. The device includes one or plural transistors and piezoelectric mechanisms, with an arrangement capable of applying a variable mechanical strain on transistor channels.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: June 28, 2011
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jerome Lolivier, Maud Vinet, Thierry Poiroux
  • Publication number: 20080290384
    Abstract: An improved microelectronic device, and method for making such a microelectronic device. The device includes one or plural transistors and piezoelectric mechanisms, with an arrangement capable of applying a variable mechanical strain on transistor channels.
    Type: Application
    Filed: July 21, 2006
    Publication date: November 27, 2008
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Jerome Lolivier, Maud Vinet, Thierry Poiroux
  • Publication number: 20080233703
    Abstract: An electronic device and method for forming same. The electronic device includes a source and drain region. Each region has an uppermost portion comprised of a first silicide where the first silicide is overlaid with a first dielectric layer. The electronic device further includes a gate region having an uppermost portion comprised of a second silicide. The second silicide is both thicker than the first silicide and has a lower resistivity than the first silicide with at least a portion of the second silicide being formed in an opening in the first dielectric layer.
    Type: Application
    Filed: March 21, 2007
    Publication date: September 25, 2008
    Applicant: ATMEL CORPORATION
    Inventors: Romain Coppard, Jerome Lolivier