Patents by Inventor Jerome Moritz

Jerome Moritz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MRAM element with low writing temperature
    Patent number: 9336846
    Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
    Type: Grant
    Filed: January 16, 2014
    Date of Patent: May 10, 2016
    Assignee: CROCUS TECHNOLOGY SA
    Inventors: Ioan Lucian Prejbeanu, Jerome Moritz, Bernard Dieny
  • MRAM ELEMENT WITH LOW WRITING TEMPERATURE
    Publication number: 20150357014
    Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
    Type: Application
    Filed: January 16, 2014
    Publication date: December 10, 2015
    Inventors: Ioan Lucian Prejbeanu, Jerome Moritz, Bernard Dieny
  • Thermally assisted magnetic writing device
    Patent number: 8947916
    Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 3, 2015
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Bernard Dieny, Jerome Moritz, Ricardo Sousa
  • THERMALLY ASSISTED MAGNETIC WRITING DEVICE
    Publication number: 20130250671
    Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.
    Type: Application
    Filed: September 29, 2011
    Publication date: September 26, 2013
    Applicant: Commissariat a' I'energie atomique et aux energies alternatives
    Inventors: Bernard Dieny, Jerome Moritz, Ricardo Sousa
  • MAGNETIC MULTILAYER DEVICE, METHOD FOR PRODUCING SUCH A DEVICE, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY AND LOGIC GATE USING SUCH A DEVICE
    Publication number: 20080151615
    Abstract: This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 26, 2008
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Bernard Rodmacq, Stephane Auffret, Bernard Dieny, Jerome Moritz