Patents by Inventor Jerome S. Hubacek
Jerome S. Hubacek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230290657Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: March 15, 2023Publication date: September 14, 2023Inventors: Jengyi Yu, Samantha S.H. Tan, Mohammed Haroon Alvi, Richard Wise, Yang Pan, Richard Alan Gottscho, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Timothy William Weidman, Qinghuang Lin, Jerome S. Hubacek
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Publication number: 20230045336Abstract: Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: July 2, 2021Publication date: February 9, 2023Inventors: Jengyi Yu, Samantha S.H. Tan, Mohammed Haroon Alvi, Richard Wise, Yang Pan, Richard Alan Gottscho, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Timothy William Weidman, Qinghuang Lin, Jerome S. Hubacek
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Publication number: 20220413276Abstract: Various embodiments include reflective-mode Fourier ptychographic microscope (RFPM) apparatuses and methods for using the RFPM. In one example, the RFPM includes a multiple-component light source configured to direct radiation to a surface. The multiple-component light source has a number of individual-light sources, each of which is configured to be activated individually. The RFPM further includes collection optics to receive radiation reflected and scattered or otherwise redirected from the surface, and a sensor element to convert received light-energy from the collection optics into an electrical-signal output. Other apparatuses, designs, and methods are disclosed.Type: ApplicationFiled: November 24, 2020Publication date: December 29, 2022Inventors: Collin Michael Anderson, Roderick Mosely, Nerissa Sue Draeger, Jerome S. Hubacek
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Patent number: 8845855Abstract: A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.Type: GrantFiled: July 25, 2007Date of Patent: September 30, 2014Assignee: Lam Research CorporationInventors: Jerome S. Hubacek, Albert R. Ellingboe, David Benzing
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Patent number: 7517803Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.Type: GrantFiled: September 28, 2004Date of Patent: April 14, 2009Assignee: Lam Research CorporationInventors: Daxing Ren, Jerome S. Hubacek, Nicholas E. Webb
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Patent number: 6846726Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.Type: GrantFiled: September 20, 2002Date of Patent: January 25, 2005Assignee: Lam Research CorporationInventors: Daxing Ren, Jerome S. Hubacek, Nicholas E. Webb
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Publication number: 20040161943Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.Type: ApplicationFiled: September 20, 2002Publication date: August 19, 2004Inventors: Daxing Ren, Jerome S. Hubacek, Nicholas E. Webb
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Publication number: 20020127853Abstract: A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.Type: ApplicationFiled: December 29, 2000Publication date: September 12, 2002Inventors: Jerome S. Hubacek, Albert R. Ellingboe, David Benzing
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Patent number: 6408786Abstract: A plasma processing chamber including a ceramic liner in the form of ceramic tiles mounted on a resilient support member. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. The liner can be heated by a heater which provides heat to the liner by thermal conduction. To remove excess heat from the liner, the resilient support can be an aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.Type: GrantFiled: September 23, 1999Date of Patent: June 25, 2002Assignee: Lam Research CorporationInventors: William S. Kennedy, Robert A. Maraschin, Jerome S. Hubacek
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Patent number: 6376385Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.Type: GrantFiled: February 23, 2001Date of Patent: April 23, 2002Assignee: Lam Research CorporationInventors: John Lilleland, Jerome S. Hubacek, William S. Kennedy
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Publication number: 20010031557Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.Type: ApplicationFiled: February 23, 2001Publication date: October 18, 2001Inventors: John Lilleland, Jerome S. Hubacek, William S. Kennedy
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Patent number: 6194322Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.Type: GrantFiled: July 31, 2000Date of Patent: February 27, 2001Assignee: Lam Research CorporationInventors: John Lilleland, Jerome S. Hubacek, William S. Kennedy
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Patent number: 6148765Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circuit disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.Type: GrantFiled: September 9, 1999Date of Patent: November 21, 2000Assignee: Lam Research CorporationInventors: John Lilleland, Jerome S. Hubacek, William S. Kennedy
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Patent number: 6073577Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.Type: GrantFiled: June 30, 1998Date of Patent: June 13, 2000Assignee: Lam Research CorporationInventors: John Lilleland, Jerome S. Hubacek, William S. Kennedy