Abstract: A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adliesion to a semiconductor material. A method for bonding the resulting structure to a heat spreader is also disclosed.

Abstract: A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adhesion to a semiconductor material. method for bonding the resulting structure to a heat spreader is also disclosed.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: Various embodiments provide methods for forming a diamond heat spreader and integrating the diamond heat spreader with a heat source without generating voids at the interface. In one embodiment, a semiconductor layer can be epitaxially formed on a diamond substrate having a desirably low surface root mean square (RMS) roughness. The semiconductor epi-layer can be used as an interface layer for bonding the diamond substrate to the heat source to provide efficient heat spreading.

Abstract: A multi-wavelength VECSEL includes an active region comprising a plurality of semiconductor quantum wells having an intrinsically broadened gain with a wavelength selective filter disposed within the cavity to provide a laser output that oscillates at two or more separated wavelengths simultaneously. A non-linear crystal may be provided in the cavity to emit radiation at a frequency in the THz range that is the difference of the frequencies associated with two of the separated wavelengths.

Abstract: The present invention relates generally to a terahertz and millimeter wave source, and more particularly, but not exclusively, to structures for coupling the terahertz electromagnetic waves out of the source.

Abstract: A laser apparatus includes a first surface-emitting laser device having an active region including at least one group of two or more quantum wells configured to generate photons and having an internal mirror configured to reflect the generated photons, and first and second opposing end cavity mirrors optically coupled to each other via the internal mirror of the first surface-emitting laser device and arranged to reflect the photons generated by the first surface-emitting laser device back to the first surface-emitting laser device to form a standing wave having a single antinode coincident with said at least one group of two or more quantum wells.

Abstract: An MFA-MOPA that includes a semiconductor laser with separate master oscillator and trumpet-flared power amplifier regions. Within the trumpet-flared active gain region of the uniformly-pumped power amplifier of the MFA-MOPA device, the density distribution of carriers and reflections of the laser beam are analyzed to determine the output powers at which filamentation and beam degradation due to reflections occur. The shape of the trumpet-flare is optimized to delay the onset of filamentation and the degradation of the output laser beam due to reflections to higher output powers for the MFA-MOPA device.