Abstract: A visible and infrared image sensor, including: a first active layer for detecting visible radiation, in which a plurality of visible detection pixels are defined; and superimposed on the first active layer, a second active layer for detecting infrared radiation, in which a plurality of infrared detection pixels are defined, wherein the second active layer defines a vertical resonant cavity for said infrared radiation, the sensor further including, on the side of the face of the second active layer opposite the first active layer, a control integrated circuit superimposed on the first and second active layers.

Abstract: Example embodiments provide a color filter pattern for a plenoptic sensor. In some embodiments, the plenoptic sensor is a nona-pixel sensor comprising a plurality of microlenses and a respective 3×3 array of color filter pixels under each microlens. The filter pixels have three different colors, and the colors of the color filter pixels are arranged such that each of the sub-aperture images generated from the plenoptic image has an extended Bayer pattern, and such that the pixels of a refocused image generated by adding the sub-aperture images with a disparity value of zero or one receive contributions from three pixels of the first color, three pixels of the second color, and three pixels of the third color.

Abstract: Some embodiments of an apparatus, for example a light-field apparatus, may include a microlens; a color filter system; and two or more plenoptic subpixel sensors, the two or more plenoptic subpixel sensors comprising two or more photodiodes formed in a silicon layer, wherein a pyramid shape is etched in the two or more respective silicon photodiodes formed in the silicon layer.

Abstract: A polarimetric image sensor formed inside and on top of a semiconductor substrate, the sensor including: —a plurality of pixels, each including a photodetector formed in the semiconductor substrate; —a polarization router including a two-dimensional metasurface arranged on the side of an illumination surface of the photodetectors, the metasurface including a two-dimensional array of pads; and—a plurality of first microlenses extending in front of a pair of adjacent pixels of the sensor.

Abstract: A method of manufacturing a device for acquiring a 2D image and a depth image, the method comprising the following steps: a) forming, on a first face of a first support semiconductor substrate, a first sensor comprising a plurality of depth pixels; b) forming, in the first support substrate, on the side of a second face of the first substrate opposite the first face, at least one optical concentrator; c) forming, in and on a second semiconductor substrate, a second sensor comprising a plurality of 2D image pixels; and d) placing the second sensor right next the first support substrate on the side of the second face of the first support substrate.

Abstract: An image sensor including a plurality of pixels divided into elementary groups, each elementary group including a plurality of adjacent pixels arranged in a matrix, in rows and columns, each elementary group including first pixels, second and third visible image pixels sensitive in different wavelength ranges and fourth depth image pixels, wherein each row of each elementary group includes at least a fourth pixel.

Abstract: The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

Abstract: The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: —a photosensitive region formed in the semiconductor substrate; —a diffraction structure formed on the side of an illumination surface of the photosensitive region; and —a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region.

Abstract: The present disclosure relates to an image sensor including a plurality of pixels formed in and on a semiconductor substrate and arranged in a matrix with N rows and M columns, with N being an integer greater than or equal to 1 and M an integer greater than or equal to 2. A plurality of microlenses face the substrate, and each of the microlenses is associated with a respective pixel. The microlenses are arranged in a matrix in N rows and M columns, and the pitch of the microlens matrix is greater than the pitch of the pixel matrix in a direction of the rows of the pixel matrix.

Abstract: The present disclosure relates to an image sensor including a plurality of pixels formed in and on a semiconductor substrate and arranged in a matrix with N rows and M columns, with N being an integer greater than or equal to 1 and M an integer greater than or equal to 2. A plurality of microlenses face the substrate, and each of the microlenses is associated with a respective pixel. The microlenses are arranged in a matrix in N rows and M columns, and the pitch of the microlens matrix is greater than the pitch of the pixel matrix in a direction of the rows of the pixel matrix.

Abstract: An image sensor including a substrate including first portions containing photodetectors adapted to capturing a radiation and second portions containing electronic components located between come of the first portions; a pixelated filter including filter pixels, at least some of which include an interference filter including a stack of planar layers; and shields reflecting or absorbing said radiation covering the second portions and including walls reflecting or absorbing said radiation extending between filter pixels along at least a portion of the height of the pixelated filter.

Abstract: A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.

Abstract: The present disclosure relates to an image sensor including a plurality of pixels formed in and on a semiconductor substrate and arranged in a matrix with N rows and M columns, with N being an integer greater than or equal to 1 and M an integer greater than or equal to 2. A plurality of microlenses face the substrate, and each of the microlenses is associated with a respective pixel. The microlenses are arranged in a matrix in N rows and M columns, and the pitch of the microlens matrix is greater than the pitch of the pixel matrix in a direction of the rows of the pixel matrix.

Abstract: A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.

Abstract: A user interface system having rows of photon sensors for detecting an actuating body and lenses, each lens at least partially covering, with the exception of the central portion of the lens, a row of photon sensors.

Abstract: The invention relates to a method including the steps of: displaying first successive images on a screen; acquiring at least one second image; searching for the position of at least one actuation member relative to the screen based on an analysis of the second image; and modifying at least one of the next first images to be displayed if conditions of determination of the position of the actuation member in the second image are only partially fulfilled.

Abstract: A color back-side illuminated image sensor including, on the side of the thin semiconductor layer opposite to the illuminated surface, periodic thickness unevennesses forming an optic network having characteristics which make it capable of reflecting a given wavelength chosen within the range of the wavelengths of an illuminating incident beam.

Abstract: An integrated image sensor capable of determining the distance to objects contained in a scene, including a pixel array, each pixel in the array being associated with a microlens and being formed of an assembly of sub-pixels, each including a photosensitive area.

Abstract: The invention relates to a method including the steps of: displaying first successive images on a screen; acquiring at least one second image; searching for the position of at least one actuation member relative to the screen based on an analysis of the second image; and modifying at least one of the next first images to be displayed if conditions of determination of the position of the actuation member in the second image are only partially fulfilled.

Abstract: A user interface system having rows of photon sensors for detecting an actuating body and lenses, each lens at least partially covering, with the exception of the central portion of the lens, a row of photon sensors.