Abstract: A process module including a chamber body having a lower chamber and an upper chamber is provided. The lower chamber is configured to mate with the upper chamber along a diagonal interface. An electrode assembly having a substrate support is provided. The electrode assembly is coupled to the upper chamber. A hinge connect couples a first side of the lower chamber to a first side of the upper chamber. The upper chamber is configured to split and open along the diagonal interface and rotate about the hinge connect. The electrode assembly is configured to rotate with the upper chamber in a direction that is away from the lower chamber.

Abstract: A process module including a chamber body having a lower chamber and an upper chamber is provided. The lower chamber is configured to mate with the upper chamber along a diagonal interface. An electrode assembly having a substrate support is provided. The electrode assembly is coupled to the upper chamber. A hinge connect couples a first side of the lower chamber to a first side of the upper chamber. The upper chamber is configured to split and open along the diagonal interface and rotate about the hinge connect. The electrode assembly is configured to rotate with the upper chamber in a direction that is away from the lower chamber.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support aim is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.